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Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond…

介观与纳米尺度物理 · 物理学 2022-04-13 N. Moreau , S. Faniel , F. Martins , L. Desplanque , X. Wallart , S. Melinte , V. Bayot , B. Hackens

We demonstrate how robust entanglement of quantum dot molecular system in a voltage controlled junction can be generated. To improve the quantum information characteristics of this system, we propose an applicable protocol which contains…

量子物理 · 物理学 2019-06-13 Elaheh Afsaneh , Malek Bagheri Harouni

We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…

材料科学 · 物理学 2015-05-20 Ming Gong , Weiwei Zhang , Zhuming Han , G. -C. Guo , Lixin He

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…

We study spin transport in the one- and two-electron regimes of parallel-coupled double quantum dots (DQDs). The DQDs are formed in InAs nanowires by a combination of crystal-phase engineering and electrostatic gating, with an interdot…

介观与纳米尺度物理 · 物理学 2019-02-28 Malin Nilsson , Florinda Viñas Boström , Sebastian Lehmann , Kimberly A. Dick , Martin Leijnse , Claes Thelander

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…

Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication…

: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…

Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions:…

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…

介观与纳米尺度物理 · 物理学 2020-01-14 H. G. J. Eenink , L. Petit , W. I. L. Lawrie , J. S. Clarke , L. M. K. Vandersypen , M. Veldhorst

The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an…

光学 · 物理学 2007-05-23 J. J. N. Calado , J. M. L. Figueiredo , C. N. Ironside

Asymmetric double tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps…

其他凝聚态物理 · 物理学 2009-11-11 A. Iovan , D. B. Haviland , V. Korenivski

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via…

介观与纳米尺度物理 · 物理学 2012-01-19 Sungjae Cho , Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and…

介观与纳米尺度物理 · 物理学 2015-06-04 Alexandra C. Ford , S. Bala Kumar , Rehan Kapadia , Jing Guo , Ali Javey

A major challenge in the field of quantum computing is the construction of scalable qubit coupling architectures. Here, we demonstrate a novel tuneable coupling circuit that allows superconducting qubits to be coupled over long distances.…

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires…

介观与纳米尺度物理 · 物理学 2015-09-30 Dingxun Fan , Sen Li , N. Kang , Philippe Caroff , L. B. Wang , Y. Q. Huang , M. T. Deng , C. L. Yu , H. Q. Xu

We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side…

Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…

介观与纳米尺度物理 · 物理学 2016-04-13 B. S. Tao , H. X. Yang , Y. L. Zuo , X. Devaux , G. Lengaigne , M. Hehn , D. Lacour , S. Andrieu , M. Chshiev , T. Hauet , F. Montaigne , S. Mangin , X. F. Han , Y. Lu

Tunnelling conductances observed for mesoscopic Kondo systems exhibit a zero-bias peak and two coherent side peaks. The former peak is usually understood as a Kondo effect and the latter side peak is recently clarified as the effect of…

介观与纳米尺度物理 · 物理学 2014-01-30 Jongbae Hong , S. G. Chung

We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…

介观与纳米尺度物理 · 物理学 2015-05-20 L. J. Wang , H. O. Li , Z. Su , T. Tu , G. Cao , C. Zhou , X. J. Hao , G. C. Guo , G. P. Guo