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The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers…
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully…
Ohm's law describes the proportionality of current density and electric field. In solid-state conductors, Ohm's law emerges due to electron scattering processes that relax the electrical current. Here, we use nitrogen-vacancy center…
We present a novel method enabling precise post-fabrication modulation of the electrical resistance in micrometer-scale regions of amorphous indium oxide (a-InO$_x$) films. By subjecting initially insulating films to an electron beam at…
A low-pressure double-inductively coupled plasma device is used to study the fundamental plasma parameters, plasma chemistry, and UV photon emission from the first excited state of nitric oxide, NO(A), in gas mixtures of nitrogen and…
The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation…
A multiphysics phase field model is used for the computational study of memristive thin film morphology and current-voltage hysteresis. In contrast to previous computational methods, no requirements are made on conducting filament geometry.…
The origin of ferromagnetism in nanoparticles of nonmagnetic oxides is an interesting area of research. In the present work, transport properties of niobium thin films, with beta-Ga2O3 nanoparticles embedded within them, are presented.…
Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent…
The microscopic doping mechanism behind the superconductor-to-insulator transition of a thin film of YBa2Cu3O7 was recently identified as due to the migration of O atoms from the CuO chains of the film. Here we employ density-functional…
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…
Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the…
Formation of wrinkles is a common phenomenon in the large area growth of two dimensional layered materials on metallic substrates. Wrinkles can significantly affect the working of 2D materials based large scale electronic devices and…
Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at…
Refrigeration systems based on compression of greenhouse gases are environmentally threatening and cannot be scaled down to on-chip dimensions. In the vicinity of a phase transition caloric materials present large thermal responses to…
Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent…
Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying…
Three types of metallic nanostructures comprising niobium were investigated experimentally; in all three types, electric transport at very low temperatures was governed by Coulomb blockade effects. 1. Thin film strips of niobium could be…
We report on the electrical properties of polycrystalline NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition. First, we analyzed the thickness and contact size dependences of threshold…
Superconducting Nb thin films with rectangular arrays of submicron antidots have been systemically investigated by transport measurements. In low fields, the magnetoresistance curves demonstrate well-defined dips at integral and rational…