相关论文: Fast high-power thyristors triggered in impact-ion…

Femtosecond laser pulse propagation in a relativistic self-trapping regime (RST) in a near-critical density plasma makes it possible to maximize the total charge of the accelerating electrons and laser-to-electrons conversion rate, that can…

We present the characterization of a readout Application-Specific Integrated Circuit (ASIC) for the CMS Endcap Timing Layer (ETL) of the High-Luminosity LHC upgrade with charge injection. The ASIC, named ETROC and developed in a 65 nm CMOS…

We investigate by theory and experiment, the Josephson junction switching current detector in an environment with frequency dependent damping. Analysis of the circuit's phase space show that a favorable topology for switching can be…

A highly integrated, high performance, and re-configurable device, which is designed for the Nitrogen-Vacancy center based quantum applications, is reported. The digital compartment of the device is fully implemented in a…

The front-end electronics of silicon detectors are typically designed to ensure optimal noise performance for the expected input charge. A combination of preamplifiers and shaper circuits result in a nontrivial response of the front-end to…

Availability of 20 T operational field dipole magnets would open the way for a 16.5 TeV beam energy accelerator in the LHC tunnel. Here we discuss the main issues related to the magnet design of this extremely challenging dipole: main…

Medium voltage direct-current based integrated power system is projected as one of the solutions for powering the all-electric ship. It faces significant challenges for accurately energizing advanced loads, especially the pulsed power load,…

We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…

Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented.…

We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…

Electron dynamics of anatase TiO$_2$ under the influence of ultrashort and intense laser field is studied using the real-time time-dependent density functional theory (TDDFT). Our findings demonstrate the effectiveness of TDDFT calculations…

Electron and photon triggers covering transverse energies from 5 GeV to several TeV are essential for the ATLAS experiment to record signals for a wide variety of physics: from Standard Model processes to searches for new phenomena in both…

In nonlinear microresonators driven by continuous-wave (cw) lasers, Turing patterns have been studied in the formalism of Lugiato-Lefever equation with emphasis on its high coherence and exceptional robustness against perturbations.…

We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on…

In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.

This paper reports a newly developed high current transformer-rectifier High-Tc Superconducting (HTS) flux pump switched by dynamic resistance. A quasi-persistent current of over 1.1 kA has been achieved at 77 K using the device, which is…

Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…

In this work, we report direct as well as pulsed electric field-induced resistivity switching and its relaxation in a multiferroic insulator La2NiMnO6. At a fixed base temperature (Tb), the dc resistivity switches abruptly from a high to a…

We introduce a contactless technique for probing superconductivity, metal-insulator transitions, and magnetic ordering in micron-sized samples under extreme pressure. Utilizing a multistage Lenz lens system, directly sputtered onto diamond…