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An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

Due to Klein tunneling, electrostatic potentials are unable to confine Dirac electrons. We show that it is possible to confine massless Dirac fermions in a monolayer graphene sheet by inhomogeneous magnetic fields. This allows one to design…

介观与纳米尺度物理 · 物理学 2007-05-23 A. De Martino , L. Dell'Anna , R. Egger

The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is…

介观与纳米尺度物理 · 物理学 2019-10-15 Dawei Zhai , Nancy Sandler

The orbital magnetism in spatially varying magnetic fields is studied in monolayer graphene within the effective mass approximation. We find that, unlike the conventional two-dimensional electron system, graphene with small Fermi wave…

介观与纳米尺度物理 · 物理学 2015-05-13 Mikito Koshino , Yasunori Arimura , Tsuneya Ando

Thermopower and the Lorentz number for an edge-free (Corbino) graphene disk in the quantum Hall regime is calculated within the Landauer-B\"{u}ttiker formalism. We find, by varying the electrochemical potential, that amplitude of the…

介观与纳米尺度物理 · 物理学 2023-06-13 Adam Rycerz , Katarzyna Rycerz , Piotr Witkowski

Quantum spin Hall effect was first predicted in graphene. However, the weak spin orbit interaction in graphene meant that the search for quantum spin Hall effect in graphene never fructified. In this work we show how to generate the quantum…

介观与纳米尺度物理 · 物理学 2016-12-09 SK Firoz Islam , Colin Benjamin

We study the band structures of hybrid graphene quantum dots subject to a magnetic flux and electrostatic potential. The system is consisting of a circular single layer graphene surrounded by an infinite bilayer graphene. By solving the…

介观与纳米尺度物理 · 物理学 2022-01-19 Bouchaib Lemaalem , Youness Zahidi , Ahmed Jellal

The aim of this work is to describe the electronic properties of graphene in a constant magnetic field in the long wavelength approximation with random binary disorder, by solving the Soven equation self-consistently. Density of state…

介观与纳米尺度物理 · 物理学 2015-03-03 Juan Sebastian Ardenghi , Pablo Bechthold , Estela Gonzalez , Paula Jasen , Alfredo Juan

We study ballistic transport of Dirac fermions in silicene through arrays of barriers, of width $d$, in the presence of an exchange field $M$ and a tunable potential of height $U$ or depth $-U$. The spin- and valley-resolved conductances as…

介观与纳米尺度物理 · 物理学 2015-12-09 N. Missault , P. Vasilopoulos , V. Vargiamidis , F. M. Peeters , B. Van Duppen

Photon-assisted charge transport through a double barrier laser structure, separated by a region assisted by a magnetic field, is studied. Employing Floquet theory and matrix formalism, the transmission probabilities for the central band…

介观与纳米尺度物理 · 物理学 2024-10-18 Rachid El Aitouni , Miloud Mekkaoui , Abdelhadi Bahaoui , Ahmed Jellal

We demonstrate that unidirectional and backscattering immune propagation of terahertz optical waves can be achieved in a topological valley-Hall waveguide made of graphene nanohole plasmonic crystals. In order to gain deeper physical…

光学 · 物理学 2020-06-01 J. W. You , Z. Lan , Q. Bao , N. C. Panoiu

A system similar to gapped graphene (for example, fluorinated) containing two or more electron valleys is considered. It is assumed that the material has a sector cut and is deformed in the plane and the the cut edges are connected to form…

介观与纳米尺度物理 · 物理学 2021-01-14 M. V. Entin , L. I. Magarill

In spintronics, the ability to transport magnetic information often depends on the existence of a spin current traveling between two different magnetic objects acting as source and probe. A large fraction of this information never reaches…

介观与纳米尺度物理 · 物理学 2015-03-17 F. S. M. Guimarães , A. T. Costa , R. B. Muniz , M. S. Ferreira

Previously, using an incompressible von K\'arm\'an-Howarth formalism, the behavior of cross-scale energy transfer in magnetic reconnection and turbulence was found to be essentially identical to each other, independent of an external…

等离子体物理 · 物理学 2023-10-27 Subash Adhikari , Yan Yang , William H. Matthaeus , Paul A. Cassak , Tulasi N. Parashar , Michael A. Shay

We investigate interaction-induced valley domain walls in bilayer graphene in the $\nu=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a…

强关联电子 · 物理学 2012-05-10 Chia-Wei Huang , Efrat Shimshoni , H. A. Fertig

We developed a unified mesoscopic transport model for graphene nanoribbons, which combines the non-equilibrium Green's function (NEGF) formalism with the real-space {\pi}-orbital model. Based on this model, we probe the spatial…

介观与纳米尺度物理 · 物理学 2010-09-13 S. Bala Kumar , M. B. A. Jalil , S. G. Tan , Gengchiau Liang

We study the tunneling behavior of Dirac fermions in graphene subjected to a double barrier potential profile created by spatially overlapping laser fields. By modulating the graphene sheet with an oscillating structure formed from two…

介观与纳米尺度物理 · 物理学 2024-05-28 Rachid El Aitouni , Miloud Mekkaoui , Ahmed Jellal

Despite many reports of valley-related phenomena in graphene and its multilayers, current transport experiments cannot probe valley phenomena without the application of external fields. Here we propose a gate-defined valley splitter as a…

介观与纳米尺度物理 · 物理学 2025-02-26 Juan Daniel Torres Luna , Kostas Vilkelis , Antonio L. R. Manesco

Electrons are offered a valley degree of freedom in presence of particular lattice structures. Manipulating valley degeneracy is the subject matter of an emerging field of investigation, mostly focused on charge transport in graphene. In…

强关联电子 · 物理学 2012-04-18 Zengwei Zhu , Aurelie Collaudin , Benoit Fauque , Woun Kang , Kamran Behnia

The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric…