相关论文: The occupied electronic structure of ultrathin bor…
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon…
The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy…
Boron-doped diamond crystals (BDD, C$_{1-x}$B$_{x}$) exhibit exceptional mechanical strength, electronic tunability, and resistance to radiation damage. This makes them promising materials for use in gamma-ray crystal-based light sources.…
A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…
The electronic structure, lattice dynamics, and electron-phonon coupling of the boron-doped diamond are investigated using the density functional supercell method. Our results indicate the boron-doped diamond is a phonon mediated…
We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by Chemical Vapor Deposition, we pattern by…
We report optical reflectivity study on pure and boron-doped diamond films grown by a hot-filament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron-doping.…
Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…
We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a…
Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole…
Isolated hydrogen and hydrogen pairs in bulk diamond matrix have been studied using density functional theory calculations. The electronic structure and stability of isolated and paired hydrogen defects are investigated at different…
Boron-doped diamond undergoes an insulator-metal transition at some critical value (around 2.21 at %) of the dopand concentration. Here, we report a simple method for the calculation of its bulk modulus, based on the thermodynamical model,…
Scanning tunneling spectroscopies are performed below 100~mK on nano-crystalline boron-doped diamond films characterized by Transmission Electron Microscopy and transport measurements. We demonstrate a strong correlation between the local…
Gold nanostructures have important applications in nanoelectronics, nano-optics as well as in precision metrology due to their intriguing opto-electronic properties. These properties are governed by the bulk band structure but to some…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…
In the present paper, we investigate the structural, thermodynamic, dynamic, elastic, and electronic properties of doped 2D diamond C$_4$X$_2$ (X = B or N) nanosheets in both AA$'$A$''$ and ABC stacking configurations, by first-principles…
Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…
The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional…
Quantum devices based on optically addressable spin qubits in diamond are promising platforms for quantum technologies such as quantum sensing and communication. Nano- and microstructuring of the diamond crystal is essential to enhance…