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相关论文: The Electronic Thickness of Graphene

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We show that two graphene layers stacked directly on top of each other (AA stacking) form strong chemical bonds when the distance between planes is 0.156 nm. Simultaneously, C-C in-plane bonds are considerably weakened from partial…

材料科学 · 物理学 2008-02-27 P. L. de Andres , R. Ramirez , J. A. Verges

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene…

介观与纳米尺度物理 · 物理学 2020-07-01 Yulei Han , Yafei Ren , Xinlong Dong , Junjie Zeng , Wei Ren , Zhenhua Qiao

Using a scanning electron microscope, we observed a reproducible, discrete distribution of secondary electron intensity stemming from an atomically thick graphene film on a thick insulating substrate. The discrete distribution made it…

材料科学 · 物理学 2010-09-29 Hidefumi Hiura , Hisao Miyazaki , Kazuhito Tsukagoshi

Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this…

介观与纳米尺度物理 · 物理学 2011-04-18 Guohong Li , A. Luican , J. M. B. Lopes dos Santos , A. H. Castro Neto , A. Reina , J. Kong , E. Y. Andrei

The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on e.g. the direction and magnitude of mechanical strain and doping. Here we present systematic…

We performed density functional theory (DFT) calculations for a bi-layered heterostructure combining a graphene layer with a MoS2 layer with and without intercalated Li atoms. Our calculations demonstrate the importance of the van der Waals…

材料科学 · 物理学 2015-02-27 Towfiq Ahmed , N. A. Modine , Jian-Xin Zhu

Two-dimensional (2D) materials are among the most studied ones nowadays, because of their unique properties. These materials are made of, single- or few atom-thick layers assembled by van der Waals forces, hence allowing a variety of…

介观与纳米尺度物理 · 物理学 2020-12-17 Pascal Puech , Iann Gerber , Fabrice Piazza , Marc Monthioux

As mechanical structures enter the nanoscale regime, the influence of van der Waals forces increases. Graphene is attractive for nanomechanical systems because its Young's modulus and strength are both intrinsically high, but the mechanical…

介观与纳米尺度物理 · 物理学 2015-05-28 Steven P. Koenig , Narasimha G. Boddeti , Martin L. Dunn , J. Scott Bunch

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

介观与纳米尺度物理 · 物理学 2015-06-03 Rai Moriya , Takehiro Yamaguchi , Yoshihisa Inoue , Yohta Sata , Sei Morikawa , Satoru Masubuchi , Tomoki Machida

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a…

介观与纳米尺度物理 · 物理学 2012-06-26 Seyoung Kim , Insun Jo , D. C. Dillen , D. A. Ferrer , B. Fallahazad , Z. Yao , S. K. Banerjee , E. Tutuc

We have used scanning tunneling microscopy and spectroscopy to resolve the spatial variation of the density of states of twisted graphene layers on top of a highly oriented pyrolytic graphite substrate. Owing to the twist a moire pattern…

We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with…

介观与纳米尺度物理 · 物理学 2018-04-18 L. Huder , A. Artaud , T. Le Quang , G. Trambly de Laissardière , A. G. M. Jansen , G. Lapertot , C. Chapelier , V. T. Renard

Due to their anisotropy, layered materials are excellent candidates for studying the interplay between the in-plane and out-of-plane entanglement in strongly correlated systems. A relevant example is provided by 1T-TaS2, which exhibits a…

We evaluate the van der Waals (vdW) interaction energy at zero temperature between two undoped strained graphene layers separated by a finite distance. We consider the following three models for the anisotropic case: (a) where one of the…

材料科学 · 物理学 2014-06-25 Anand Sharma , Peter Harnish , Alexander Sylvester , Valeri N. Kotov , A. H. Castro Neto

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily…

Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin,…

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the…

材料科学 · 物理学 2009-11-13 Alexander Mattausch , Oleg Pankratov

Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these…

Layered electrides, as typified by Ca$_2$N, are a new class of quasi-two-dimensional materials with low work functions. Using first-principles calculations, we have shown that a graphene layer deposited on Ca$_2$N is doped to $n=5\times…

材料科学 · 物理学 2017-12-20 Takeshi Inoshita , Masaru Tsukada , Susumu Saito , Hideo Hosono

Van der Waals (vdW) heterostructures, which are produced by the precise assemblies of varieties of two-dimensional (2D) materials, have demonstrated many novel properties and functionalities. Here we report a nano-plasmonic study of vdW…

介观与纳米尺度物理 · 物理学 2023-01-30 Fengrui Hu , Minsung Kim , Y. Zhang , Yilong Luan , Kai-Ming Ho , Yi Shi , Cai-Zhuang Wang , Xinran Wang , Zhe Fei
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