相关论文: Ultra-low-power orbital-controlled magnetization s…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
Flexible ferromagnetic rings are spin-chain magnets, in which the magnetic and mechanical subsystems are coupled. The coupling is achieved through the tangentially oriented anisotropy axis. The possibility to operate the mechanics of the…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Unravelling the mechanism behind bulk perpendicular magnetic anisotropy (PMA) in amorphous rare earth-transition metal films has proven challenging. This is largely due to the inherent complexity of amorphous structure and the entangled…
Through systematics density functional calculations, the mechanism of the substrate induced spin reorientation transition in FePc/O-Cu(110) was explained in terms of charge transfer and rearrangement of Fe-d orbitals. Moreover, we found…
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the…
Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization,…
A central prospect of antiferromagnetic spintronics is to exploit magnetic properties that are unavailable with ferromagnets. However, this poses the challenge of accessing such properties for readout and control. To this end, light-induced…
We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…