相关论文: Vacancy complexes in nonequilibrium germanium-tin …
We have performed total-energy density-functional calculations using first-principles pseudopotentials to determine the atomic and electronic structure of neutral surface and subsurface vacancies at the GaP(110) surface. The cation as well…
The phase transition in CrN epitaxial films is substantially suppressed by epitaxial constraint. Here, we propose that nitrogen (N) vacancies can be taken as a knob to regulate the phase transition of CrN(111) epitaxial films. To validate…
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a…
We present the space density evolution, from z=1.5 up to z=5.5, of the most massive (M$\geq10^9$M$_{\odot}$) black holes hosted in jetted Active Galactic Nuclei(AGNs). The analysis is based on a sample of 380 luminosity-selected…
Context. Variability is a ubiquitous feature of active galactic nuclei (AGNs), and the characterisation of the variability is crucial to constrain its physical mechanism and proper applications in AGN studies. The advent of all-sky and…
It is demonstrated that persistent-photoconductivity (PPC), well-studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low level of energy-flux necessary to…
We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 GHz and 640 GHz respectively, in a 14 nm GaAs / 2 nm AlAs superlattice structure. By comparing measurements at 296 K and 79 K we separate the…
The experimentally observed order-of-magnitude reduction in the thermal conductivity along the growth axis of (GaAs)_n/(AlAs)_n (or n x n) superlattices is investigated theoretically for (2x2), (3x3) and (6x6) structures using an accurate…
The structure and properties of vacancies in a 2 nm Si nano-crystal are studied using a real space density functional theory/pseudopotential method. It is observed that a vacancy's electronic properties and energy of formation are directly…
Multi-crystalline silicon is widely used for producing low-cost and high-efficiency solar cells. During crystal growth and device fabrication, silicon solar cells contain grain boundaries (GBs) which are preferential segregation sites for…
This paper reports results from a search for nucleon decay through 'invisible' modes, where no visible energy is directly deposited during the decay itself, during the initial water phase of SNO+. However, such decays within the oxygen…
Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and higher structural quality, higher purity, as well as zero…
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic…
GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in-situ during epitaxy. From the electronic valence…
We present the observed fraction of galaxies with an Active Galactic Nucleus (AGN) as a function of environment in the Early Data Release of the Sloan Digital Sky Survey (SDSS). Using 4921 galaxies between 0.05 <= z <= 0.095, and brighter…
One of the most exciting explanations advanced for the recent diphoton excess found by ATLAS and CMS is in terms of sgoldstino decays: a signal of low-energy supersymmetry-breaking scenarios. The sgoldstino, a scalar, couples directly to…
The results of positron annihilation lifetime spectroscopy measurements on undoped, electron irradiated, and Nb doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two…
The Bose-Einstein condensation of vacancies in a three-dimensional decorated lattice is considered. The model describes possible scenario of superfluidity of solid helium, caused by the presence of zero-point vacancies in a dislocation…
Under the unified model for active galactic nuclei (AGNs), narrow-line (Type 2) AGNs are, in fact, broad-line (Type 1) AGNs but each with a heavily obscured accretion disk. We would therefore expect the optical continuum emission from Type…
Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of…