相关论文: High efficiency resonant-metasurface germanium pho…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
Here we propose a waveguide-integrated germanium plasmonic photodetector that is based on a long-range dielectric-loaded surface plasmon polariton waveguide configuration. As this configuration ensures a long propagation distance, i.e.,…
Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For…
Miniaturized photodetectors are becoming increasingly sought-after components for a range of next generation technologies, such as autonomous vehicles, integrated wearable devices, or gadgets embedded in the Internet of Things. A major…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…
The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…
High-speed active metasurfaces enable spatiotemporal control of incident light within an ultra-thin layer, offering new possibilities for optical communication, computing, and sensing. However, a fundamental tradeoff between electrical…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
High bandwidth and low dark current germanium (Ge) photodetectors are crucial in silicon photonic integrated circuits. The bandwidth of Ge photodetectors is restricted by carrier transit time and parasitic parameters. And thermal generation…
Dielectric resonant metasurfaces can be utilized for efficient high harmonic generation, which has been explored here in this effort for a high-efficient Germanium metasurface for upconverted full-Stokes imaging at 1.33-micron wavelength by…
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to…
The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited…
Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics. Telecom-wavelength…
The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…