相关论文: MOSFET GIDL Current Variation with Impurity Doping…

Employing density-functional theory (DFT) calculations, the generalized-stacking-fault energy (GSFE) curves along two crystallographic slips, glide and shuffle, for both pristine graphene and impurity of boron (B) or nitrogen (N) doped…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on…

In this paper we will give a short rewiew about the conductance of a mesoscopic waveguide strip with a few impurities. Green-function method is used allowing to treat systems with low number of impurities, not only the completly clean case.…

The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET…

Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gate on a single dopant atom in a semiconductor up to field…

The in-plane London penetration depth, $\Delta\lambda(T)$, was measured using a tunnel diode resonator technique in single crystals of Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ with doping levels $x$ ranging from heavily underdoped, $x$=0.16…

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

We study how impurities influence the current-induced dynamics of magnetic Skyrmions moving in a racetrack geometry. For this, we solve numerically the generalized Landau-Lifshitz-Gilbert equation extended by the current-induced spin…

Dynamical and statistical behavior of the ionic particles in dissolved salts have long been known, but their hydration shells still raise unsettled questions. We engineered a ``diffusion tunnel diode" that is structurally analogous to the…

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…

Dark current is shown to be significantly reduced in quantum well infrared photodetectors in the tunneling regime, i.e. at very low temperature, by shifting the dopant impurity layers away from the central part of the wells. This result…

The London penetration depth $\lambda(T)$ has been measured in single crystals of Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ using the tunnel diode resonator technique. The measured doping levels of $x=$~0.038, 0.047, 0.058, 0.074 and 0.10 range…

In this paper we study a gradient flow approach to the problem of quantization of measures in one dimension. By embedding our problem in $L^2$, we find a continuous version of it that corresponds to the limit as the number of particles…

Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…

Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm-3 and less is investigated with X-ray fluorescent element…

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…

We study in this work the transport properties of an impurity immersed in a granular gas under stationary nonlinear Couette flow. The starting point is a kinetic model for low-density granular mixtures recently proposed by the authors [Vega…

Dynamics of the 1D electron transport between two reservoirs are studied based on the inhomogeneous Tomonaga- Luttinger Liquid (ITLL) model in the case when the effect of the electron backscattering on the impurities is negligible. The…

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…