相关论文: The sixteenfold way and the quantum Hall effect at…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
The fractional quantum Hall effect (FQHE) at the filling factor with an even denominator, 5/2, occurs despite the expectation, due to the electron statistics, that the denominator must be an odd number. It is believed that the Cooper…
When confined to two dimensions and exposed to a strong magnetic field, electrons screen the Coulomb interaction in a topological fashion; they capture and even number of quantum vortices and transform into particl es called `composite…
We study the interplay of particle-hole symmetry and fermion-vortex duality in multicomponent half-filled Landau levels, such as quantum Hall gallium arsenide bilayers and graphene. For the $\nu{=}1/2{+}1/2$ bilayer, we show that…
The fractional quantum Hall effect (FQHE) in two-dimensional electron system (2DES) is an exotic, superfluid-like matter with an emergent topological order. From the consideration of Aharonov-Bohm interaction of electrons and magnetic…
We numerically study the fractional quantum Hall effect at filling factors $\nu=12/5$ and 13/5 (the particle-hole conjugate of 12/5) in high-quality two-dimensional GaAs heterostructures via exact diagonalization including finite well width…
We present a theory of composite fermion edge states and their transport properties in the fractional and integer quantum Hall regimes. We show that the effective electro-chemical potentials of composite fermions at the edges of a Hall bar…
Two-component fractional quantum Hall systems are providing a major motivation for a large section of the physics community. Here we study two-component fractional quantum Hall systems in the spin-polarized half-filled lowest Landau level…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
One of the most intriguing phenomena in nature is the fractional quantum Hall effect (FQHE) observed in the half-filled second Landau level which, arising in even-denominator filling factors, $\nu=5/2$ and $7/2$, is completely different…
Observation of filling factor 6/13 is one of the surprising fractional quantum Hall states in the second Landau level because, in contrast to the standard wisdom, the fractions ($\nu < 1/2$) with lower numerators, namely 4 and 5, have not…
In bilayer quantum Hall systems at filling fractions near nu=1/2+1/2, as the spacing d between the layers is continuously decreased, intra-layer correlations must be replaced by inter-layer correlations, and the composite fermion (CF) Fermi…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
Pairing interaction between fermionic particles leads to composite Bosons that condense at low temperature. Such condensate gives rise to long range order and phase coherence in superconductivity, superfluidity, and other exotic states of…
Quantum Hall plateaus at quarter fillings occur in GaAs wide quantum wells, hole-doped GaAs, and bilayer graphene. However, the interactions favoring incompressible states over compressible composite-Fermi liquids at such fillings are not…
We consider a non-Abelian candidate state at filling factor $\nu=3/7$ state belonging to the parton family. We find that, in the second Landau level of GaAs (i.e. at filling factor $\nu=2+3/7$), this state is energetically superior to the…
We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to…
The High Landau level filling fractions 5/2, 7/3 and 8/3 are interpreted by using the angular momentum model. It is found that for the odd number of flux quanta, the quasiparticles called the ``composite fermions'' are fermions but for even…
The Landau level mixing is the key in understanding the mysterious $5/2$ fractional quantum Hall effect in GaAs quantum well. Theoretical calculations with and without Landau level mixing show striking differences. However, the way to deal…
Via the application of parallel magnetic field, we induce a single-layer to bilayer transition in two-dimensional electron systems confined to wide GaAs quantum wells, and study the geometric resonance of composite fermions (CFs) with a…