相关论文: Colloidal Quantum Dot Tandem Solar Cells Using CVD…

Introducing an isolated intermediate band (IB) into a wide band gap semiconductor can potentially improve the optical absorption of the material beyond the Shockley-Queisser limitation for solar cells. Here, we present a systematic study of…

Heterostructured quantum dots (QDs) based on narrow-gap PbSe and wide-gap CdSe have been studied with an eye on their prospective applications in near-infrared (NIR) light sources, photodetectors, and solar cells. The most common structural…

Quantum dot solar cells (QDSC) are widely acknowledged to be one of the best solar energy harvesting devices in the present world. Absorber layer is a core component of a QDSC with a strong influence on its operational efficiency. Hence, we…

To absorb the photons below the band-gap energy effectively, we proposed a quantum dot (QD) photocell modeled by multi-level system for the quantum yields and photo-to-charge efficiency limits. The theoretical results show the quantum…

We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 %…

Silicon solar cells dominate the solar cell market with record lab efficiencies reaching almost 26%. However, after 60 years of research, this efficiency saturated close to the theoretical limit for silicon, and radically new approaches are…

Cu based ternary chalcogenides are gathering attention for sustainable energy applications due to their reduced complexity compared to quaternary alternatives. We used drift diffusion modeling to evaluate the feasibility of photovoltaics…

The intermediate band solar cell (IBSC) and quantum ratchet solar cell (QRSC) have the potential to surpass the efficiency of standard single-junction solar cells by allowing sub-gap photon absorption through states deep inside the band…

Energy sustainability and interconnectivity are the two main pillars on which cutting-edge architecture is based and require the realisation of energy and intelligent devices that can be fully integrated into buildings, capable of meeting…

We simulated photovoltaic characteristics of single heterojunction solar cell with Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using one dimensional solar cell capacitance simulator (SCAPS-1D). n-CdS/ZnO double buffer layer is used…

Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be…

There are recent investigations regarding tandem solar cells with a top perovskite cell and a bottom silicon one with a potential of > 25% power conversion efficiency. Because of still high production costs of silicon cells it is believed…

In this paper we carried out theoretical study of the general issues related to the efficiency of SiC:H/a-Si:H single- and multi-junction tandem solar cells. Implementation of numerical simulations by the use of AMPS-1D program of…

Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal…

Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not…

We report a type of solar cells based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is one-atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe…

Solar photons possessing energy less than the band-gap of a single-junction solar cell can be utilized via the up-conversion (UC) of two or more photons, resulting in the emission of a single above-bandgap photon. Due to the non-linear…

Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and…

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin…

Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use…