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相关论文: Ferroelectric ZrO$_{2}$ monolayers as buffer layer…

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Unique polar properties of nanoscale hafnia-zirconia oxides (Hf$_x$Zr$_{1-x}$O$_2$) are of great interest for condensed matter physics, nanophysics and advanced applications. These properties are connected (at least partially) to the…

材料科学 · 物理学 2025-01-22 Eugene A. Eliseev , Sergei V. Kalinin , Anna N. Morozovska

Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane…

材料科学 · 物理学 2021-12-13 Junlei Zhao , Xinyu Wang , Haohao Chen , Zhaofu Zhang , Mengyuan Hua

Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and…

材料科学 · 物理学 2024-08-27 Tianyuan Zhu , Shiqing Deng , Shi Liu

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films…

Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation…

Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…

Most non-ferroelectric two-dimensional materials can be endowed with so-called sliding ferroelectricity via non-equivalent homo-bilayer stacking, which is not applicable to mono-element systems like pure graphene bilayer with inversion…

介观与纳米尺度物理 · 物理学 2023-08-31 Liu Yang , Shiping Ding , Jinhua Gao , Menghao Wu

Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…

We propose ferroelectric layer sliding as a new approach to realize and manipulate topological quantum states in two-dimensional (2D) bilayer magnetic van der Waals materials. We show that stacking monolayer ferromagnetic topological states…

材料科学 · 物理学 2025-08-13 Ning-Jing Yang , Jian-Min Zhang , Xiao-Ping Li , Zeying Zhang , Zhi-Ming Yu , Zhigao Huang , Yugui Yao

Using density functional theory calculations, ultrathin films of SrVO3(d1) and SrCrO3(d2) on SrTiO3 substrates have been studied as possible multiferroics. Although both are metallic in the bulk limit, they are found to be insulating as a…

材料科学 · 物理学 2015-06-16 Kapil Gupta , Priya Mahadevan , Phivos Mavropoulos , Marjana Lezaic

Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier offering a pathway to engineer larger electromechanical and…

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001)…

应用物理 · 物理学 2019-06-06 J. Lyu , I. Fina , R. Bachelet , G. Saint-Girons , S. Estandia , J. Gazquez , J. Fontcuberta , F. Sanchez

We performed density functional theory calculations with self-consistent van der Waals corrected exchange-correlation (XC) functionals to capture the structure of black phosphorus and twelve monochalcogenide monolayers and find the…

介观与纳米尺度物理 · 物理学 2020-01-01 Shiva P. Poudel , John W. Villanova , Salvador Barraza-Lopez

Some of the Multiferroics [1] form a rare class of materials that exhibit magnetoelectric coupling arising from the coexistence of ferromagnetism and ferroelectricity, with potential for many technological applications.[2,3] Over the last…

材料科学 · 物理学 2009-11-13 R. V. K. Mangalam , Nirat Ray , Umesh V. Waghmare , A. Sundaresan , C. N. R. Rao

In this work multiferroic thin films of Bi containing perovskite oxides are discussed, where the driving force for ferroelectricity are the Bi3+ lone-pair electrons. First, a brief introduction of Bi containing multiferroic perovskite…

强关联电子 · 物理学 2014-02-11 Rainer Schmidt , Eric Langenberg , Jofre Ventura , Manuel Varela

SrTiO$_{3}$ is known to be an incipient ferroelectric. It is thought that ferroelectric stability in SrTiO$_{3}$ is suppressed by a delicate competition with quantum fluctuation and antiferrodistortion. The ferroelectric phase can, however,…

材料科学 · 物理学 2014-04-22 Ashima Arora , Goutam Sheet

The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity…

材料科学 · 物理学 2019-11-12 Yanyu Liu , Wei Zhou , Gang Tang , Chao Yang , Xueyun Wang , Jiawang Hong

Topological textures like vortices, labyrinths and skyrmions formed in ferroic materials have attracted extensive interests during the past decade for their fundamental physics, intriguing topology, and technological prospects. So far,…

The elasticity and piezoelectricity of zinc oxide (ZnO) crystals and single layers are investigated from the first-principles calculations. It is found that a ZnO thin film less than three Zn-O layers prefers a planar graphite-like…

材料科学 · 物理学 2007-05-23 Z. C. Tu , X. Hu

Recent observations of unusual ferroelectricity in thin films of HfO_2 and related materials have attracted broad interest to the materials and led to the emergence of a number of competing models for observed behaviors. Here we develop the…

材料科学 · 物理学 2018-11-27 Maya D. Glinchuk , Anna N. Morozovska , Yunseok Kim , Sergei V. Kalinin