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相关论文: Unraveling the dislocation core structure at a van…

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Dislocations in van der Waals materials are linear defects confined to the interfaces between consecutive stoichiometric monolayers of a bulk layered crystal. Here, we present a mesoscale model for the description of interlayer dislocations…

介观与纳米尺度物理 · 物理学 2024-09-19 Isaac Soltero , Vladimir I. Fal'ko

Stacking orders and topological defects substantially influence the physical properties of 2D van der Waals (vdW) materials. However, the inherent features of 2D materials challenge the effectiveness of single characterization techniques in…

Dislocations in crystalline materials are widely exploited to tailor the thermal conductivity of semiconductors and thermoelectrics, yet a critical gap persists: direct measurement of local thermal resistance at individual buried…

The ripplocation is a crystallographic defect which is unique to layered materials, combining nanoscale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations, in…

材料科学 · 物理学 2021-06-02 James G. McHugh , Pavlos Mouratidis , Kenny Jolley

Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterized thin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. By high-resolution scanning transmission…

Long-period moir\'e superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks…

介观与纳米尺度物理 · 物理学 2024-04-30 V. V. Enaldiev

Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption…

By using the state-of-the-art microscopy and spectroscopy in aberration-corrected scanning transmission electron microscopes, we determine the atomic arrangements, occupancy, elemental distribution, and the electronic structures of…

材料科学 · 物理学 2017-05-10 Peng Gao , Ryo Ishikawa , Bin Feng , Akihito Kumamoto , Naoya Shibata , Yuichi Ikuhara

Bismuth telluride (Bi2Te3) and its alloys are the best bulk thermoelectric materials known today. The stacked quasi-two-dimensional (2D) layers of Bi2Te3 were also identified as topological insulators. In this paper we describe a method for…

介观与纳米尺度物理 · 物理学 2010-04-19 Desalegne Teweldebrhan , Vivek Goyal , Alexander A. Balandin

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of…

Morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2-xSbxTe3-ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. Topological…

材料科学 · 物理学 2017-12-27 L N Lukyanova , I V Makarenko , O A Usov , P A Dementev

Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for…

介观与纳米尺度物理 · 物理学 2019-08-07 Xin Zhang , Kaige Hu , Yifei Li , Guohua Wei , Nathaniel P. Stern , Min Pan , Xiao Li , Hong Luo , Lei Liu

Topological insulators represent a paradigm shift in surface physics. The most extensively studied Bi$_2$Se$_3$-type topological insulators exhibit layered structures, wherein neighboring layers are weakly bonded by van der Waals…

材料科学 · 物理学 2016-01-22 Can Li , Torben Winzer , Aron Walsh , Binghai Yan , Catherine Stampfl , Aloysius Soon

Dislocations are a central concept in materials science, which dictate the plastic deformation and damage evolution in materials. Layered materials such as graphite admit two general types of interlayer dislocations: basal and prismatic…

Topological materials occupy the central stage in the modern condensed matter physics because of their robust metallic edge or surface states protected by the topological invariant, characterizing the electronic band structure in the bulk.…

介观与纳米尺度物理 · 物理学 2021-08-05 Bitan Roy , Vladimir Juricic

Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric…

材料科学 · 物理学 2013-08-08 Xin Luo , Michael B. Sullivan , Su Ying Quek

The introduction of 'twist' or relative rotation between two atomically thin van der Waals (vdW) membranes gives rise to periodic Moire potential, leading to a substantial altercation of the band structure of the planar assembly. While most…

介观与纳米尺度物理 · 物理学 2020-12-30 Phanibhusan S Mahapatra , Bhaskar Ghawri , Kenji Watanabe , Takashi Taniguchi , Subroto Mukerjee , Arindam Ghosh

Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between…

Bismuth Telluride (Bi$_2$Te$_3$) is a widely studied topological insulator, recognized for its unique surface states, low electronic bandgap, and low thermal conductivity. In this study, we characterize exfoliated Bi$_2$Te$_3$ dispersions…

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