相关论文: High-speed domain wall racetracks in a magnetic in…
The understanding of antiferromagnetic domain walls, which are the interface between domains with different N\'eel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
Memory and logic devices that encode information in magnetic domains rely on the controlled injection of domain walls to reach their full potential. In this work, we exploit the chiral coupling induced by the Dzyaloshinskii-Moriya…
The manipulation of magnetism with a gate voltage is expected to lead the way towards the realization of energy-efficient spintronics devices and high-performance magnetic memories. Exploiting magneto-ionic effects under micro-patterned…
Ferromagnetic domain walls -transitional regions between magnetic domains- are an essential ingredient for racetrack memory, a device concept that promises to deliver faster and more compact memory storage compared to other non-volatile…
We study current-induced dynamics of spin textures in thin magnetic nanowires. We derive effective equations of motion describing the dynamics of the domain-wall soft modes associated with topological defects. Because the magnetic domain…
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare…
Efficient electrical manipulation of domain walls is key to developing magnetic devices with fast switching capabilities and low energy consumption. Here we demonstrate Bloch-type domain wall velocities exceeding 1 km s$^{-1}$ in the…
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for developing high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate…
Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
We carry out large-scale micromagnetic simulations which demonstrate that due to topological constraints, internal domain walls (Bloch lines) within extended domain walls are more robust than domain walls in nanowires. Thus, the possibility…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in…
We investigate the magnetization dynamics that arise when a thin-film ferromagnet is deposited on a topological insulator (TI), focusing in particular on domain-wall motion via current and the possibility of a spin-wave torque acting on the…
Motivated by manipulating the magnetic order of bilayer CrI$_3$, we carry out microscopic calculations to find the magnetic order and various magnetic domains of the system in the presence of an electric field. Making use of density…
Scattering of spin-up and spin-down electrons while passing through a ferromagnetic domain wall leads to an additional resistance for transport current, usually observed prominently in constricted magnetic structures. In this report, we use…
The fast spin dynamics provide many opportunities for the future communication and memory technologies. One of the most promising examples is the domain wall (DW) racetrack memory. To achieve fast device performances, the high-speed motion…
Domain wall memories have undergone several changes over the years for faster shift, read, and write operations; however, fundamental issues persist due to creating pinning sites topographically along the nanowire. The deformity in notches…
We theoretically investigate domain wall motion in an antiferromagnetic insulator layer caused by thermally generated spin currents in an adjacent spin-split superconductor layer. An uncompensated antiferromagnet interface enables the two…