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相关论文: Frustration effects at finite temperature in the h…

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Using the strong coupling diagram technique, we find three phases of the half-filled isotropic Hubbard model on a triangular lattice at finite temperatures. The weak-interaction ($U\lesssim5t$) and strong-interaction ($U\gtrsim9t$) phases…

强关联电子 · 物理学 2025-04-10 A. Sherman

We study novel electronic properties of the Hubbard model on a triangular lattice using the cellular dynamical mean-field theory. The interplay of strong geometric frustration and electron correlations causes a Mott transition at the…

强关联电子 · 物理学 2009-11-11 Bumsoo Kyung

We employ a recently developed computational many-body technique to study for the first time the half-filled Anderson-Hubbard model at finite temperature and arbitrary correlation ($U$) and disorder ($V$) strengths. Interestingly, the…

强关联电子 · 物理学 2017-08-29 Niravkumar D. Patel , Anamitra Mukherjee , Nitin Kaushal , Adriana Moreo , Elbio Dagotto

Finite-temperature properties of the frustrated Hubbard model are theoretically examined by using the recently proposed thermal pure quantum state, which is an unbiased numerical method for finite-temperature calculations. By performing…

强关联电子 · 物理学 2018-01-30 Takahiro Misawa , Youhei Yamaji

We study the ground state properties of the geometrically frustrated Hubbard model on the anisotropic checkerboard lattice with nearest-neighbor hopping $t$ and next nearest-neighbor hopping $t'$. By using the path-integral renormalization…

强关联电子 · 物理学 2009-11-13 Takuya Yoshioka , Akihisa Koga , Norio Kawakami

The magnon propagator is evaluated in the AF (\pi,\pi,\pi) and the F-AF (0,\pi,\pi) states at the RPA level, and the spin-fluctuation corrections are compared. Transverse spin fluctuations are sharply enhanced by the frustration- inducing…

强关联电子 · 物理学 2007-05-23 Avinash Singh

We study the dynamical response of the half-filled one-dimensional(1d) Hubbard model for a range of interaction strengths $U$ and temperatures $T$ by a combination of numerical and analytical techniques. Using time-dependent density matrix…

强关联电子 · 物理学 2018-02-07 Alberto Nocera , Fabian H. L. Essler , Adrian E. Feiguin

We study the low-temperature critical behavior of the one-dimensional Hubbard model near half filling caused by enhanced antiferromagnetic fluctuations. We use a mean-field-type approximation with a two-particle self-consistency…

强关联电子 · 物理学 2021-09-10 Václav Janiš , Antonín Klíč , Jiawei Yan

We analyze the Thermodynamic Bethe Ansatz equations of the one-dimensional half-filled Hubbard model in the "spin-disordered regime", which is characterized by the temperature being much larger than the magnetic energy scale but small…

强关联电子 · 物理学 2009-11-11 S. Ejima , F. H. L. Essler , F. Gebhard

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

We study the second order finite temperature Mott transition point in the fully frustrated Hubbard model at half filling, within Dynamical Mean Field Theory. Using quantum Monte Carlo simulations we show the existence of a finite…

强关联电子 · 物理学 2009-10-31 Marcelo J. Rozenberg , R. Chitra , G. Kotliar

Ground-state and finite-temperature properties of the exactly solvable mixed spin-1/2 Ising-Heisenberg planar model composed of identical trigonal bipyramids that are arranged into a regular archimedean lattice are examined with the aim to…

统计力学 · 物理学 2019-08-27 Lucia Galisova

We investigate the Hubbard model on two typical frustrated lattices in two dimensions, the kagome lattice and the anisotropic triangular lattice, by means of the cellular dynamical mean field theory. We show that the metallic phase is…

强关联电子 · 物理学 2015-05-13 Takuma Ohashi , Tsutomu Momoi , Hirokazu Tsunetsugu , Norio Kawakami

We explore the effect of fluctuations for $T \geq T_c$ in the 2-D negative Hubbard model within the framework of the selfconsistent T-matrix formalism, which goes beyond the BCS approximation and includes pair fluctuations. We enter the…

凝聚态物理 · 物理学 2016-08-14 J. J. Rodríguez-Núñez , S. Schafroth , R. Micnas , T. Schneider , H. Beck , M. H. Pedersen

The Hubbard model at temperatures above the N\'{e}el transition, despite being a paramagnet, can exhibit rich physics due to the interplay of Fermi surface, on-site interaction $U$ and thermal fluctuations. Nevertheless, the understanding…

强关联电子 · 物理学 2025-01-23 Yu-Feng Song , Youjin Deng , Yuan-Yao He

We study a range of thermodynamic properties (charge susceptibility, specific heat, entropy and spin susceptibility) of the Hubbard model on the anisotropic triangular lattice at half filling by means of the numerical finite-temperature…

强关联电子 · 物理学 2013-05-30 J. Kokalj , Ross H. McKenzie

The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…

强关联电子 · 物理学 2011-11-09 M. Tsuchiizu , Y. Suzumura , C. Bourbonnais

We study the superfluid-Mott insulator (SF-MI) transition in an one-dimensional optical lattice system, and employ the Bose-Hubbard model in two dimension with a combined potential of an optical lattice in one direction and a confining…

量子气体 · 物理学 2014-02-06 Motoyoshi Inoue , Keita Kobayashi , Yusuke Nakamura , Yoshiya Yamanaka

A precursor effect on the Fermi surface in the two-dimensional Hubbard model at finite temperatures near the antiferromagnetic instability is studied using three different itinerant approaches: the second order perturbation theory, the…

强关联电子 · 物理学 2009-09-25 Taiichiro Saikawa , Alvaro Ferraz

The properties of a phase at finite interactions can be significantly influenced by the underlying dispersion of the non-interacting Hamiltonian. We demonstrate this by studying the repulsive Hubbard model on the $2$D Lieb lattice, which…

强关联电子 · 物理学 2017-12-27 Pramod Kumar , Tuomas I. Vanhala , Päivi Törmä
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