相关论文: Engineering magnetoresistance: A new perspective
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer…
Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
Two-dimensional (2D) materials can host stable, long-range magnetic phases in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
Quantum decoherence is the key mechanism determining whether quantum effects can manifest in quantum computation and transport, and mastering decoherence is central to designing and operating functional quantum devices. Here, we present a…
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…
The rapidly expanding class of quantum materials known as {\emph{topological semimetals}} (TSM) display unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for…
In this paper we demonstrate, using a couple of variants of a two-strand ladder network that, a quasiperiodic Aubry-Andr\'e-Harper (AAH) modulation applied to the vertical strands, mimicking a deterministic distortion in the network, can…
Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction…
Magnetoresistance (MR) in magnetic materials arises from spin-exchange coupling between local moments and itinerant electrons, representing a challenging many-body open-quantum problem. Here we develop a comprehensive microscopic theory of…
Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance effect occurring in hybrid devices consisting of a high-mobility material joined by a metal. The change in resistance can exceed 107% at room temperature when a magnetic…
In the present work, a relation has been established between degree of polarization and effective mass ratio (EMR) and magnetoresistance (MR) of one-dimensional non-degenerate system (which can represent a nano-wire or a linear chain of…
A detailed study of the evolution of the magnetoresistance was performed on electrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5 nm to 4.5 nm. For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance (AMR)…
Quantum decoherence has been studied using nuclear magnetic resonance(NMR). By choosing one qubit to simulate environment, we examine the decoherence behavior of two quantum systems: a one qubit system and a two qubit system. The…
The relevance of pair-breaking by exchange and dipolar fields, and by injected spins in a low carrier density cuprate Y$_{1-x}$Pr$_x$Ba$_2$Cu$_3$O$_7$ sandwiched between two ferromagnetic La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ layers is…
Liquid-state NMR quantum computer has demonstrated the possibility of quantum computation and supported its development. Using NMR quantum computer techniques, we observed phase decoherence under two kinds of artificial noise fields; one a…
We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear…
We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…