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相关论文: Spin filtering in CrI$_3$ tunnel junctions

200 篇论文

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through…

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…

介观与纳米尺度物理 · 物理学 2015-06-23 Deniz Çakır , Diana M. Otálvaro , Geert Brocks

Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der…

Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME)…

介观与纳米尺度物理 · 物理学 2018-03-21 Shengwei Jiang , Jie Shan , Kin Fai Mak

The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced…

材料科学 · 物理学 2023-07-12 Lei Qiao , Jan Sladek , Vladimir Sladek , Alexey S. Kaminskiy , Alexander P. Pyatakov , Wei Ren

Layered transition-metal compounds with controllable magnetic behaviors provide many fascinating opportunities for the fabrication of high-performance magneto-electric and spintronic devices. The tuning of their electronic and magnetic…

We consider theoretically transport in a spinfull one-channel interacting quantum wire placed in an external magnetic field. For the case of two point-like impurities embedded in the wire, under a small voltage bias the spin-polarized…

强关联电子 · 物理学 2010-02-17 Zoran Ristivojevic , George I. Japaridze , Thomas Nattermann

Since thermal fluctuations become more important as dimensions shrink, it is expected that low-dimensional magnets are more sensitive to lattice distortions and phonons than bulk systems are. Here we present a fully relativistic…

材料科学 · 物理学 2022-04-06 Banasree Sadhukhan , Anders Bergman , Yaroslav O. Kvashnin , Johan Hellsvik , Anna Delin

Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…

介观与纳米尺度物理 · 物理学 2013-11-04 T. Tzen Ong , A. M. Black-Schaffer , W. Shen , B. A. Jones

The spin-filter material CrVTiAl is a promising candidate for producing highly spin-polarized currents at room temperature in a nonmagnetic architecture. Thin films of compensated-ferrimagnetic CrVTiAl have been grown and their electrical…

Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…

介观与纳米尺度物理 · 物理学 2023-10-20 Wen Jin , Gaojie Zhang , Hao Wu , Li Yang , Wenfeng Zhang , Haixin Chang

The van der Waals (vdW) magnetic heterostructures provide flexible ways to realize particular magnetic properties that possess both scientific and practical significance. Here, by firstprinciples calculation, we predict strong…

材料科学 · 物理学 2023-08-16 Hongxing Li , Wei-Bing Zhang , Guanghui Zhou

CrCl3 is a layered insulator that undergoes a crystallographic phase transition below room temperature and orders antiferromagnetically at low temperature. Weak van der Waals bonding between the layers and ferromagnetic in-plane magnetic…

We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…

材料科学 · 物理学 2009-11-11 Subodha Mishra , Sunita Thulasi , Sashi Satpathy

We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic X-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd…

The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…

介观与纳米尺度物理 · 物理学 2016-02-05 Z. Yue , M. E. Raikh

Magnons dominate the magnetic response of the recently discovered insulating ferromagnetic two dimensional crystals such as CrI$_3$. Because of the arrangement of the Cr spins in a honeycomb lattice, magnons in CrI$_3$ bear a strong…

介观与纳米尺度物理 · 物理学 2020-02-04 A. T. Costa , D. L. R. Santos , N. M. R. Peres , J. Fernández-Rossier

Introducing noncollinear magnetization into a monolayer CrI$_3$ is proposed to be an effective approach to modulate the local electronic properties of the two-dimensional (2D) magnetic material. Using first-principles calculation, we…

材料科学 · 物理学 2019-05-22 Lingling Ren , Qian Liu , Pengxiang Xu , Zhicheng Zhong , Li Yang , Zhe Yuan , Ke Xia

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the…

介观与纳米尺度物理 · 物理学 2015-05-13 Y. Ando , K. Hamaya , K. Kasahara , Y. Kishi , K. Ueda , K. Sawano , T. Sadoh , M. Miyao