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Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter…

材料科学 · 物理学 2010-02-03 Michael Nolan , Sean O'Callaghan , Giorgos Fagas , James C. Greer , Thomas Frauenheim

Two dimensional few-layer black phosphorus crystal structures have recently fabricated and demonstrated great potential in applications of electronics. In this work, we employed first principles density functional theory calculations to…

材料科学 · 物理学 2014-10-09 Xihong Peng , Qun Wei , Andrew Copple

First principles calculations were performed to study strain effects on band gap of armchair graphene nanoribbons (AGNRs)with different edge passivation, including H, O, and OH group. The band gap of the H-passivated AGNRs shows a nearly…

计算物理 · 物理学 2015-05-27 Xihong Peng , Selina Velasquez

Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is…

材料科学 · 物理学 2021-05-12 Kaoru Hisama , Mina Maruyama , Shohei Chiashi , Shigeo Maruyama , Susumu Okada

In this paper, we apply the first-principle theory to explore how the electronic structures of armchair graphene nanoribbons (AGNRs) are affected by chemical modifications. The edge addends include H, F, N, NH$_{2}$, and NO$_{2}$. Our…

材料科学 · 物理学 2007-11-13 Hao Ren , Qunxiang Li , Haibin Su , Q. W. Shi , Jie Chen , Jinlong Yang

Tuning band gaps in two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was…

材料科学 · 物理学 2017-09-13 Sun-Woo Kim , Hyun Jung , Hyun-Jung Kim , Jin-Ho Choi , Su-Huai Wei , Jun-Hyung Cho

In this Letter, we investigate the strain-induced band-gap modulation of both armchair and zigzag graphane nanoribbons based on the first-principles calculations. Within the elastic range, the band gap changes linearly with the uniaxial…

材料科学 · 物理学 2011-11-29 Yan Zhang , Xiaojun Wu , Qunxiang Li , Jinlong Yang

In this work we show, by means of a density functional theory formalism, that the simple physical contact between hydrogen terminated boron nitride surfaces gives rise to a metallic interface with free carries of opposite sign at each…

Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic…

化学物理 · 物理学 2015-05-20 Gaoxue Wang , Ravindra Pandey , Shashi P. Karna

The electronic properties of monolayer phosphorene are exotic due to its puckered structure and large intrinsic direct band gap. We derive and discuss its band structure in the presence of a perpendicular magnetic field. Further, we…

介观与纳米尺度物理 · 物理学 2015-07-23 M. Tahir , P. Vasilopoulos , F. M. Peeters

We present a symmetry analysis of electronic bandstructure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ('phosphorene'). Expressions for energy dispersion relation and spin-dependent…

材料科学 · 物理学 2014-10-03 Pengke Li , Ian Appelbaum

The electronic properties of squashed arm-chair carbon nanotubes are modeled using constraint free density functional tight binding molecular dynamics simulations. Independent from CNT diameter, squashing path can be divided into {\it…

计算物理 · 物理学 2009-11-11 H. Mehrez , A. Svizhenko , M. P. Anantram , M. Elstner , T. Frauenheim

Contrary to the conventional empirical law, band gap of dilute nitride semiconductors decreases with nitrogen concentration. In spite of a number of investigations, origin of this "large band gap bowing", is still under debate. In order to…

材料科学 · 物理学 2016-02-17 Masato Morifuji , Fumitaro Ishikawa

In this work, we have examined how the multi-vacancy defects induced in the horizontal direction change the energetics and the electronic structure of semiconducting Single-Walled Carbon Nanotubes (SWCNTs). The electronic structure of…

介观与纳米尺度物理 · 物理学 2017-08-21 G. Dereli , O. Eyecioglu , B. Sungu Misirlioglu

Newly fabricated monolayer phosphorene and its few-layer structures are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By…

介观与纳米尺度物理 · 物理学 2014-06-02 Ruixiang Fei , Li Yang

Using first-principles plane wave calculations we predict that electronic and magnetic properties of graphene nanoribbons can be affected by defect-induced itinerant states. The band gaps of armchair nanoribbons can be modified by hydrogen…

介观与纳米尺度物理 · 物理学 2008-08-12 M. Topsakal , E. Akturk , H. Sevincli , S. Ciraci

The energy spectrum and eigenstates of single-layer black phosphorous nanoribbons in the presence of perpendicular magnetic field and in-plane transverse electric field are investigated by means of a tight-binding method and the effect of…

介观与纳米尺度物理 · 物理学 2017-10-04 Vladimir V. Arsoski , Marko M. Grujic , Nemanja A. Cukaric , Milan Z. Tadic , Francois M. Peeters

Based on ab initio evolutionary crystal structure search computation, we report a new phase of phosphorus called green phosphorus ({\lambda}-P), which exhibits the direct band gaps ranging from 0.7 to 2.4 eV and the strong anisotropy in…

材料科学 · 物理学 2017-09-15 W. H. Han , Sunghyun Kim , In-Ho Lee , K. J. Chang

Using Density Functional Theory (DFT) method we compute linear optical absorption spectra and nonlinear optical susceptibilities of hydrogen passivated armchair and zigzag Phosphorous Nanoribbons (aPNR and zPNR) as well as \alpha-phase…

介观与纳米尺度物理 · 物理学 2018-07-02 Sima Shekarforoush , Daryoush Shiri , Farhad Khoeini

We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN…