相关论文: The direct and indirect optical absorptions of cub…
The high thermal conductivity of boron arsenide (BAs) makes it a promising material for optoelectronic applications in which thermal management is central. In this work, we study the finite temperature optoelectronic properties of BAs by…
The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical properties of cubic boron arsenide crystals including the…
$\beta$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in…
Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes…
Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high thermal conductivity of 1300 W/mK. However, many fundamental properties of BAs remain unexplored experimentally. Here, for the first time, we report the…
Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of…
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…
Zinc Oxide is a thoroughly studied wide-bandgap semiconductor possessing excellent optical and electronic properties at room temperature. The renewed interest in this material has been generated by doping with various impurities in order to…
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…
Raman and infrared absorption spectra of Mg(1-x)Al(x)B(2) have been collected for 0<x<0.5 in the spectral range of optical phonons. The x-dependence of the peak frequency, the width and the intensity of the observed Raman lines has been…
In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon…
We develop a first-principles theory of phonon-assisted optical absorption in semiconductors and insulators which incorporates the temperature dependence of the electronic structure. We show that the Hall-Bardeen-Blatt theory of indirect…
An atomic rubidium beam formed in a 70 mm long two-dimensional magneto-optical trap (2D MOT), directly loaded from a collimated Knudsen source, is analyzed using laser-induced fluorescence. The longitudinal velocity distribution, the…
Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…
$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By…
Absorption measurement is an exceptionally versatile tool for many applications in science and engineering. For absorption measurements using laser beams of light, the sensitivity is theoretically limited by the shot noise due to the…
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit…
The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for…
We have performed first-principles calculations to study optical absorption spectra of doped graphene with many-electron effects included. Both self-energy corrections and electron-hole interactions are reduced due to the enhanced screening…
We calculate the binding energy, transition energies, oscillator strength, and absorption coefficient of indirect excitons in transition metal dichalcogenide (TMDC) double layers separated by an integer number of hexagonal boron nitride…