相关论文: High Performance Direct-Current Generator Based on…

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…

We study the dynamics of the electron current in nanodevices where there are time-varying components and interactions. These devices are a nanojunction attached to heat baths and with dynamical electron-phonon interactions and a…

The analysis of nonlinear interaction of transversal electromagnetic field with degenerate collisionless classical and quantum plasmas is carried out. Formulas for calculation electric current in degenerate collisionless classical and…

Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs),…

Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…

We consider a long Josephson junction excited by a suitable external ac-signal, in order to generate control and detect breathers. Studying the nonlinear supratransmission phenomenon in a nonlinear sine-Gordon chain sinusoidally driven,…

Large scale production of hydrogen by electrochemical water splitting is considered as a promising technology to address critical energy challenges caused by the extensive use of fossil fuels. Although nonprecious nickel-based catalysts…

If a device like a graphene nanoribbon (GNR) has all its four corners attached to electric current leads, the device becomes a quantum junction through which two electrical circuits can interact. We study such system theoretically for…

We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from…

A high photon to electricity conversion efficiency of 47.2082% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design. The electronic bandgap of…

An active electrical network contains a voltage or current source that creates electromagnetic energy through a method of transduction that enables the separation of opposite polarity charges from an external source. The end result is the…

We propose, implement and test experimentally long Josephson 0-pi junctions fabricated using conventional Nb-AlOx-Nb technology. We show that using a pair of current injectors, one can create an arbitrary discontinuity of the Josephson…

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…

Coulomb drag refers to the phenomenon that a charge current in one electronic circuit induces a responsive current in a neighboring circuit solely through Coulomb interactions. For conventional interactions between fermionic particles such…

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection…

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely…

Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap.…

In autonomous microgrids frequency regulation (FR) is a critical issue, especially with a high level of penetration of the photovoltaic (PV) generation. In this study, a novel virtual synchronous generator (VSG) control for PV generation…

We report that electricity can be generated from limitless thermal motion of ions by two dimensional (2D) surface of silicon wafer at room temperature. A typical silicon device, on which asymmetric electrodes with Au and Ag thin films were…