相关论文: Layer-by-layer resistive switching: multi-state fu…
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are…
We propose a dynamical mechanism of the two-way switching between the metastable state and the stable state, which has been found in experiments of photoinduced reversible magnetization and photoinduced structural phase transition. We find…
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
The motion of domain walls is crucial for ferroelectric switching. Conventionally, the switching dynamics is believed to be determined by the motion of one or a few low-energy domain wall types of dominant population. Here, we challenge…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive…
Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the…
Strongly interacting electrons in layered materials give rise to a plethora of emergent phenomena, such as unconventional superconductivity. heavy fermions, and spin textures with non-trivial topology. Similar effects can also be observed…
We report a significant change in friction of a $\rm La_{0.55}Ca_{0.45}MnO_3$ thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at room temperature by friction force microscopy. While…
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the…
Using molecular dynamics simulations with recently developed importance sampling methods, we show that the differential capacitance of a model ionic liquid based double-layer capacitor exhibits an anomalous dependence on the applied…
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…
In models of phase coexistence, the precise form of the double-well potential is of central importance, yet it cannot be derived from first principles. In this paper, we investigate an inverse problem: starting from a prescribed transition…
Complete magnetoelectric (ME) phase diagrams of orthorhombic $R$MnO$_{3}$ with and without magnetic moments on the $R$ ions have been established. Three kinds of multiferroic ground states, the $ab$-cycloidal, the $bc$-cycloidal, and the…
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…
Investigating the canonical problem of a periodic multilayered stack containing isotropic chiral layers, we homogenized it as a uniaxial bianisotropic medium and derived its effective constitutive parameters. The stack shows a resonant…
Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an…