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相关论文: Hopping Transport in SrTiO3/Nd1-xTiO3/SrTiO3 Heter…

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We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the…

介观与纳米尺度物理 · 物理学 2015-06-12 A. Annadi , A. Putra , A. Srivastava , X. Wang , Z. Huang , Z. Q. Liu , T. Venkatesan , Ariando

We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent in the hopping equation was extracted as ~…

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature…

材料科学 · 物理学 2013-02-11 K. G. Rana , V. Khikhlovskyi , T. Banerjee

Here, we study the electrical transport and specific heat in 4$d$ based ferromagnetic material SrRuO$_3$ and its Ti substituted SrRu$_{1-x}$Ti$_x$O$_3$ series ($x$ $\le$ 0.7). The SrRuO$_3$ is a metal and shows itinerant ferromagnetism with…

强关联电子 · 物理学 2020-09-02 Renu Gupta , R. Rawat , A. K. Pramanik

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…

Transport measurements on the two dimensional electron system in Al2O3 SrTiO3 heterostructures indicate significant noncrystalline anisotropic behavior below T = 30 K. Lattice dislocations in SrTiO3 and interfacial steps are suggested to be…

强关联电子 · 物理学 2017-08-02 K. Wolff , R. Schäfer , M. Meffert , D. Gerthsen , R. Schneider , D. Fuchs

Oxide heterostructures allow for detailed studies of 2D electronic transport phenomena. Herein, different facets of magnetotransport in selected spin-orbit-coupled systems are analyzed and characterized by their single-band and multiband…

介观与纳米尺度物理 · 物理学 2021-10-14 Robert Bartel , Elias Lettl , Patrick Seiler , Thilo Kopp , German Hammerl

Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier…

介观与纳米尺度物理 · 物理学 2017-04-20 Will J. Hardy , Brandon Isaac , Patrick Marshall , Evgeny Mikheev , Panpan Zhou , Susanne Stemmer , Douglas Natelson

The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO_3 is a promising material…

强关联电子 · 物理学 2015-11-09 S. Roy , C. Autieri , B. Sanyal , T. Banerjee

LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological…

We present electrical transport measurements of heterostructures comprised of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO$_3$, which enables the thermal expansion…

材料科学 · 物理学 2014-03-05 J. H. Ngai , D. P. Kumah , C. H. Ahn , F. J. Walker

Anisotropic magnetoresistance and negative magnetoresistance for in-plane fields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-doped SrTiO3 heterostructure. Both effects are exceptionally strong in LaAlO3 /SrTiO3 . We…

强关联电子 · 物理学 2015-06-05 E. Flekser , M. Ben Shalom , M. Kim , C. Bell , Y. Hikita , H. Y. Hwang , Y. Dagan

Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned…

We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater…

材料科学 · 物理学 2009-09-16 J. H. Ngai , Y. Segal , F. J. Walker , S. Ismail-Beigi , K. Le Hur , C. H. Ahn

The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of…

Electrical transport and specific heat properties of Nd_{1-x}Pb_{x}MnO_{3} single crystals for 0.15 < x 0.5 have been studied in low temperature regime. The resistivity in the ferromagnetic insulating (FMI) phase for x < 0.3 has an…

强关联电子 · 物理学 2009-11-13 N. Ghosh , U. K. Roessler , K. Nenkov , C. Hucho , H. L. Bhat , K. H. Mueller

Hopping transport, characterized by carrier tunneling between localized states, is a key mechanism in disordered materials such as organic semiconductors, perovskites, nitride alloys, and 2D material-based inks. Two main regimes are…

无序系统与神经网络 · 物理学 2026-01-06 Alejandro Toral-Lopez , Damiano Marian , Gianluca Fiori

This paper is focused on the the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration $n_c$ at which it becomes metallic. The hopping conductivity is described by the…

介观与纳米尺度物理 · 物理学 2016-03-30 Han Fu , K. V. Reich , B. I. Shklovskii

SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal…

强关联电子 · 物理学 2015-06-15 S. Roy , A. M. Kamerbeek , K. G. Rana , S. Parui , T. Banerjee

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…

介观与纳米尺度物理 · 物理学 2009-11-10 Shi-Jie Yang , Yue Yu
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