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Excitons in van der Waals heterostructures based on atomically thin transition metal dichalcogenides are considered as potential candidates for the formation of a superfluid state in two-dimensional systems. A number of studies reported…

介观与纳米尺度物理 · 物理学 2024-06-27 M. M. Glazov , R. A. Suris

Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW)…

介观与纳米尺度物理 · 物理学 2020-08-04 Jaydeep Joshi , Tong Zhou , Sergiy Krylyuk , Albert V. Davydov , Igor Zutic , Patrick M. Vora

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of…

介观与纳米尺度物理 · 物理学 2018-09-18 Surani M. Gunasekera , Daniel Wolverson , Lewis S. Hart , Marcin Mucha-Kruczynski

Strongly bound excitons dominate the optical response in many van der Waals semiconductors, yet distinguishing between the different microscopic processes governing exciton dissociation remains challenging. Using time- and angle-resolved…

We perform a polarization-resolved magnetoluminescence study of excitons in ReS$_2$. We observe that two linearly polarized Rydberg series of excitons are accompanied by two other Rydberg series of dark excitons, brightened by an in-plane…

介观与纳米尺度物理 · 物理学 2022-08-23 P. Kapuściński , J. Dzian , A. O. Slobodeniuk , C. Rodríguez-Fernández , J. Jadczak , L. Bryja , C. Faugeras , D. M. Basko , M. Potemski

Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured…

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

In this work we study theoretically the axial spectral asymmetry of a 1D periodic multilayer systems composed by hybrid two-layers (isotropic/anisotropic) and for photon energies close to the electronic energy gaps of semiconductors…

介观与纳米尺度物理 · 物理学 2016-10-07 Andrea D'Andrea , Norberto Tomassini

Van der Waals heterostructures usually formed using atomic thin transition metal dichalcogenides (TMDCs) with a direct bandgap in the near-infrared to the visible range are promising candidates for low-dimensional optoelectronic…

介观与纳米尺度物理 · 物理学 2018-09-21 Guanghui Cheng , Baikui Li , Chunyu Zhao , Xin Yan , Hong Wang , Kei May Lau , Jiannong Wang

Monolayer transition metal dichalcogenides (TMDCs) are direct gap semiconductors with unique potential for ultrathin light emitters. Yet, their photoluminescence (PL) is not completely understood. We compute the radiative recombination rate…

材料科学 · 物理学 2018-07-20 Hsiao-Yi Chen , Maurizia Palummo , Davide Sangalli , Marco Bernardi

Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional…

III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit…

介观与纳米尺度物理 · 物理学 2024-09-23 Danxuan Chen , Jin Jiang , Thomas F. K. Weatherley , Jean-François Carlin , Mitali Banerjee , Nicolas Grandjean

Excitonic absorption, reflection and photoluminescence spectra of mixed Zn(P_{1-x}As_{x})_{2}crystals over the full range of x (0 < x < 1) and Zn_{1-x}Cd_{x}P_{2} crystals at 0 < x < 0.05 have been studied at low temperatures (1.8 K). The…

材料科学 · 物理学 2007-05-23 O. A. Yeshchenko , M. M. Biliy , Z. Z. Yanchuk

The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron-hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced…

介观与纳米尺度物理 · 物理学 2018-07-13 Christian Schneider , Mikhail M. Glazov , Tobias Korn , Sven Höfling , Bernhard Urbaszek

The transport of energy and information in semiconductors is limited by scattering between electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails all semiconductor technologies. Using Re6Se8Cl2, a…

Weyl semimetals possess unique electrodynamic properties due to a combination of strongly anisotropic and gyrotropic bulk conductivity, surface conductivity, and surface dipole layer. We explore the potential of popular tip-enhanced optical…

介观与纳米尺度物理 · 物理学 2020-01-01 Qianfan Chen , Maria Erukhimova , Mikhail Tokman , Alexey Belyanin

When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which…

Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton…

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

介观与纳米尺度物理 · 物理学 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan