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相关论文: Effective $n$-type Doping of Mg$_3$Sb$_2$ with Gro…

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Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles…

材料科学 · 物理学 2021-07-28 Anuj Goyal , Andriy Zakutayev , Vladan Stevanović , Stephan Lany

Recent experimental work has realized a new insulating state of samarium nickelate (SmNiO$_3$), accessible in a reversible manner via high-density electron doping. To elucidate this behavior, we use the first-principles density functional…

介观与纳米尺度物理 · 物理学 2019-11-27 Michele Kotiuga , Karin M. Rabe

Doped films of organic small molecules are investigated with respect to their thermoelectric properties. A variety of hosts and dopants, for both n and p-doping, are compared. C$_{60}$ n-doped by Cr$_2$(hpp)$_4$ or o-MeO-DMBI-I are found to…

材料科学 · 物理学 2014-01-08 Torben Menke

Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy…

材料科学 · 物理学 2021-07-27 Kapil Kumar , Yogesh Kumar , M. Singh , S. Patnaik , I. Felner , V. P. S. Awana

Enhancing the critical temperature (TC) is important not only to the practical applications but also to the theories of superconductivity. MgB2 is a type II superconductor with a TC of 39 K, which is very close to the McMillan limit.…

超导电性 · 物理学 2016-08-09 Shuo Tao , Yongbo Li , Guowei Chen , Xiaopeng Zhao

Using advanced ab-initio calculations, we describe the formation and confinement of a two-dimensional electron gas in short-period ($\simeq$4 nm) Nb-doped SrTiO$_3$ superlattices as function of Nb doping. We predict complete two-dimensional…

介观与纳米尺度物理 · 物理学 2013-09-20 P. Delugas , A. Filippetti , M. J. Verstraete , I. Pallecchi , D. Marré , V. Fiorentini

The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental…

材料科学 · 物理学 2020-02-10 A. Berche , P. Jund

The effect of Fe doping in the Mn site on the magnetic, transport and structural properties of polycrystalline La1/2Ca1/2MnO3 was studied. Doping with low Fe concentration (< 10%) strongly affects electrical transport and magnetization.…

材料科学 · 物理学 2016-08-31 P. Levy , L. Granja , E. Indelicato , D. Vega , G. Polla , F. Parisi

We employ density functional theory to investigate the thermoelectric properties of electron and hole doped PtSb$_2$. Our results show that for doping of 0.04 holes per unit cell (1.5$\times10^{20}$ cm$^{-3}$) PtSb$_2$ shows a high Seebeck…

材料科学 · 物理学 2014-02-19 Y. Saeed , N. Singh , Schwingenschlögl

Using X-ray photoelectron spectroscopy, a systematic study is performed of the doping dependence of the chemical potential $\mu$ in two systems of (Bi,Pb)$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+\delta}$. The doping is varied by changing the O content…

凝聚态物理 · 物理学 2009-10-22 G. Rietveld , S. J. Collocot , D. van der Marel

The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn$_{1-x}$Cr$_{x}$Te. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a…

材料科学 · 物理学 2009-11-11 Nobuhiko Ozaki , Nozomi Nishizawa , Stephane Marcet , Shinji Kuroda , Osamu Eryu , Koki Takita

A smart meta-superconductor Bi(Pb)SrCaCuO (B(P)SCCO) may increase the critical transition temperature (TC) of B(P)SCCO by electroluminescence (EL) energy injection of inhomogeneous phases. However, the increase amplitude {\Delta}TC…

超导电性 · 物理学 2021-04-07 Honggang Chen , Mingzhong Wang , Yao Qi , Yongbo Li , Xiaopeng Zhao

This study systematically investigates the effects of Ge, Ga, and Al doping on the mechanical and electronic properties of cubic Cr$_3$Si using first-principles density functional theory (DFT). Doping increases lattice constants from 4.50…

材料科学 · 物理学 2025-03-04 Siavash Karbasizadeh , Mohammad Amirabbasi

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first…

The discovery of superconductivity in copper oxide compounds has attracted considerable attention over the past three decades. The high transition temperature in these compounds, exhibiting proximity to an antiferromagnetic order in their…

The doping evolution behaviors of the normal state magnetic excitations (MEs) of the nickelate La3Ni2O7 are theoretically studied in this paper. For a filling of n = 3.0 which corresponds roughly to the material which realizes the…

超导电性 · 物理学 2024-12-30 Hai-Yang Zhang , Yu-Jie Bai , Fan-Jie Kong , Xiu-Qiang Wu , Yu-Heng Xing , Ning Xu

It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric…

材料科学 · 物理学 2017-09-13 Qichen Song , Jiawei Zhou , Laureen Meroueh , David Broido , Zhifeng Ren , Gang Chen

By performing P doping on the Si sites in the topological semimetal Mo$_5$Si$_3$, we discover strong-coupling superconductivity in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0). Mo$_5$Si$_3$ crystallizes in the W$_5$Si$_3$-type structure…

Electronic structures of the tetradymites, Bi$_2$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Se$_3$, containing various dopants and vacancies, are studied using the first principles calculations methods. We focus on the possibility of formation of the…

材料科学 · 物理学 2016-05-31 Bartlomiej Wiendlocha

This study investigates the effects of Sb, Ge, and Ga doping in AlFe$_2$B$_2$ on magnetic and magneto-caloric properties. Samples of AlFe$_2$B$_2$ and AlFe$_{1.9}$M$_{0.1}$B$_2$ (M= Ge, Ga and Sb) with 20\% excess Al were synthesized by arc…

材料科学 · 物理学 2025-06-30 R. Preyadarshini , S. Kavita , Ashutosh Kumar , D. Sivaprahasam