相关论文: Phase Slips and Parity Jumps in Quantum Oscillatio…

The inter-Landau-level spin excitations of quantum Hall states at filling factors nu=2 and 4/3 are investigated by exact numerical diagonalization for the situation in which the cyclotron (hbar*omega_c) and Zeeman (E_Z) splittings are…

The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…

In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…

In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…

Measurements in clean two-dimensional electron systems confined to wide GaAs quantum wells in which two electric subbands are occupied reveal an unexpected rotation of the orientation of the stripe phase observed at a half-filled Landau…

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…

The quantum spin Hall effect has been predicted theoretically and observed experimentally in InAs/GaSb quantum wells as a result of inverted band structures, for which electron bands in InAs layers are below heavy hole bands in GaSb layers…

First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of…

In higher Landau levels (N>0) and around filling factors nu =4N+1, a two-dimensional electron gas in a double-quantum-well system supports a stripe groundstate in which the electron density in each well is spatially modulated. When a…

We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. This device had excess n type doping and as a result. The…

We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on…

We argue that a new type of quantum Hall state requiring non-perturbative Landau level mixing arises at low electron density. In these states, up and down spin electrons pair to form spinless bosons that condense into a bosonic quantum Hall…

We report magneto-transport studies of InAs/GaSb bilayer quantum wells in a regime where the interlayer tunneling between the electron and hole gases is suppressed. When the chemical potential is tuned close to the charge neutrality point,…

Physics of two-dimensional electron gases under perpendicular magnetic field often displays three distinct stages when increasing the field amplitude: a low field regime with classical magnetotransport, followed at intermediate field by a…

Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…

The spin transitions in the fractional quantum Hall effect provide a direct measure of the tiny energy differences between differently spin-polarized states, and thereby serve as an extremely sensitive test of the quantitative accuracy of…

We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…

Landau levels (LLs) are the massively-degenerate discrete energy spectrum of a charged particle in a transverse magnetic field and lie at the heart of many intriguing phenomena such as the integer and fractional quantum Hall effects as well…

We study the critical spin-polarization energy ($\alpha_{\rm C}$) above which fractional quantum Hall states in two-dimensional electron systems confined to symmetric GaAs quantum wells become fully spin-polarized. We find a significant…