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The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…

介观与纳米尺度物理 · 物理学 2013-12-17 Wei Sun Leong , Hao Gong , John T. L. Thong

The penetration of atomic hydrogen through defect-free graphene was generally predicted to have a barrier of at least several eV, which is much higher than the 1 eV barrier measured for hydrogen-gas permeation through pristine graphene…

材料科学 · 物理学 2023-07-26 Wenqi Xiong , Weiqing Zhou , Pengzhan Sun , Shengjun Yuan

The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our…

An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2…

介观与纳米尺度物理 · 物理学 2019-11-26 Jothiramalingam Kulothungan , Manoharan Muruganathan , Hiroshi Mizuta

We have fabricated and tested mechanical resonators consisting of a single-atomic-layer of graphene deposited on suspended silicon nitride membranes. With the addition of the graphene layer we retain the desirable mechanical properties of…

介观与纳米尺度物理 · 物理学 2015-06-16 V. P. Adiga , R. De Alba , I. R. Storch , P. A. Yu , B. Ilic , R. A. Barton , S. Lee , J. Hone , P. L. McEuen , J. M. Parpia , H. G. Craighead

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by…

介观与纳米尺度物理 · 物理学 2009-11-13 K. I. Bolotin , K. J. Sikes , Z. Jiang , M. Klima , G. Fudenberg , J. Hone , P. Kim , H. L. Stormer

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

材料科学 · 物理学 2009-06-10 J. -H. Chen , C. Jang , M. Ishigami , S. Xiao , E. D. Williams , M. S. Fuhrer

Thin membranes, such as monolayer graphene of monoatomic thickness, are bound to exhibit lateral buckling under uniaxial tensile loading that impairs its mechanical behaviour. In this work, we have developed an experimental device to…

We have performed a first-principles density functional theory investigation of the penetration of helium atoms through a graphene monolayer with defects. The relaxation of the graphene layer caused by the incoming helium atoms does not…

材料科学 · 物理学 2009-11-13 O. Leenaerts , B. Partoens , F. M. Peeters

Graphene is a very promising material for nanoelectronics applications due to its unique and remarkable electronic and thermal properties. However, when deposited on metallic electrodes the overall thermal conductivity is significantly…

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…

介观与纳米尺度物理 · 物理学 2015-03-19 Adrien Allain , Zheng Han , Vincent Bouchiat

We analyze the electrostatic interactions between a single graphene layer and a SiO$_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO$_2$ surface,…

材料科学 · 物理学 2009-11-13 J. Sabio , C. Seoanez , S. Fratini , F. Guinea , A. H. Castro Neto , F. Sols

Self-heating is a severe problem for high-power microelectronic devices. Graphene and few-layer graphene have attracted tremendous attention for heat removal thanks to their extraordinarily high in-plane thermal conductivity. However, this…

Graphene is convenient material for nanomechanichal applications since high-frequency oscillations are easily accessible. In this Article, we consider graphene on a rough substrate attached to imperfections at random locations. We explore…

介观与纳米尺度物理 · 物理学 2013-09-25 Mariya V. Medvedyeva , Yaroslav M. Blanter

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

介观与纳米尺度物理 · 物理学 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz

We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and…

材料科学 · 物理学 2015-06-05 O. Ochedowski , G. Begall , N. Scheuschner , M. El Kharrazi , J. Maultzsch , M. Schleberger

Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of…

材料科学 · 物理学 2020-02-06 Ryo Nouchi , Morihiro Matsumoto , Nobuhiko Mitoma

We measure the out-of-plane shear modulus of few-layer graphene (FLG) by a blister test. During the test, we employed a monolayer molybdenum disulfide (MoS2) membrane stacked onto FLG wells to facilitate the separation of FLG from the…

介观与纳米尺度物理 · 物理学 2024-12-13 Metehan Calis , Narasimha Boddeti , J. Scott Bunch

We demonstrate the local oxidation nanopatterning of graphene films by an atomic force microscope. The technique provides a method to form insulating trenches in graphene flakes and to fabricate nanodevices with sub-nm precision. We…

介观与纳米尺度物理 · 物理学 2009-11-13 Lishan Weng , Liyuan Zhang , Yong P. Chen , Leonid P. Rokhinson