相关论文: Optimization of Amorphous Germanium Electrical Con…
The study of the relaxation mechanism of amorphous germanium after femtosecond laser irradiation is presented in this work. In particular, a thin germanium coating was deposited onto a glass substrate through the electron beam vacuum…
A probability model has been presented for understanding the operation of an array of encapsulated germanium detectors generally known as composite detector. The addback mode of operation of a composite detector has been described…
Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and higher structural quality, higher purity, as well as zero…
High Purity Germanium (HPGe) detectors are powerful detectors for gamma-ray spectroscopy. The sensitivity to low-intensity gamma-ray peaks is often hindered by the presence of Compton continuum distributions, originated by gamma-rays…
High purity germanium (HPGe) crystals will be used for the MAJORANA DEMONSTRATOR, where they serve as both the source and the detector for neutrinoless double beta decay. It is crucial for the experiment to understand the performance of the…
Pure amorphous solids are traditionally considered to set the lower bound of thermal conductivity due to their disordered atomic structure that impedes vibrational energy transport. However, the lower limits for thermal conductivity in…
A high purity germanium crystal was operated in liquid argon as a Compton suppressed radiation spectrometer. Spectroscopic quality resolution of less than 1% of the full-width half maximum of full energy deposition peaks was demonstrated.…
Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a…
We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers…
Germanium nanowires with p- and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors . Electrical transport and x-ray photoelectron spectroscopy data are correlated to glean…
Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on…
In an ideal germanium detector, fully-absorbed monoenergetic gamma-rays will appear in the measured spectrum as a narrow peak, broadened into a Gaussian of width determined only by the statistical properties of charge cloud generation and…
We describe here an efficient machine-learning based approach for the optimization of parameters used for extracting the arrival time of waveforms, in particular those generated by the detection of 511 keV annihilation gamma-rays by a 60…
Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si…
Silicon-based tracking detectors have been used in several important applications, such as in cancer therapy using particle beams, and for the discovery of new elementary particles at the Large Hadron Collider at CERN. III-V semiconductor…
We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility…
The development of high-performing sensing materials, able to detect ppb-trace concentrations of volatile organic compounds at low temperatures, is required for the development of next-generation miniaturized wireless sensors. Here, we…
Internal charge amplification (ICA) in cryogenic high-purity germanium (HPGe) can lower detection thresholds by providing gain inside the detector crystal, but reliable operation requires a predictive estimate of the avalanche-onset…