相关论文: Impurity in low energy Ar+ ion beam is the cause o…
Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, and cavity optomechanics. Their performance depends critically on the exact distribution of…
Chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. In this report, 1.2 MeV Ar ion beam is used to incorporate defects in granular ZnO. Evolution of defective state…
Surface strain often controls properties of the material including charge transport and chemical reactivity. Localized surface strain is measured with atomic resolution on (111) ceria nanoparticle surfaces using environmental transmission…
We observed that radio-frequency (rf) irradiation significantly enhances the $c$-axis resistance near and below the superconducting transition of the CuO$_{2}$ layer in contact with a normal-metal electrode on the surface of…
The paper reports on a high precision equipment designed to modify over 3-dimensions (3D) by means of high-energy gold ions the local properties of thin and thick films. A target-moving system aimed at creating patterns across the volume is…
Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi…
For the past two and a half decades, anomalous heating of trapped ions from nearby electrode surfaces has continued to demonstrate unexpected results. Caused by electric-field noise, this heating of the ions' motional modes remains an…
A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on…
We report high angular resolution (4.9" x 3.0") images of reactive ions SH+, HOC+, and SO+ toward the Orion Bar photodissociation region (PDR). We used ALMA-ACA to map several rotational lines at 0.8 mm, complemented with multi-line…
The beam-ion interaction is a potential limitation of beam performance in electron accelerators, especially where the beam emittance is of a great concern in future ultra-low emittance light source. "Conventionally", the beam instability…
Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at…
Thermal annealing of Si/Si1-xSbx/Si amorphous thin film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron…
Beam-focusing characteristics of negative ion beams have been experimentally investigated with a superimposition of a controlled perturbation of RF field in a filament-arc discharge negative ion source. Oscillations of a negative-ion…
Low-temperature variable-energy electron irradiation was used to induce non-magnetic disorder in a single crystal of hole-doped iron-based superconductor, Ba$_{1-x}$K$_x$Fe$_2$As$_2$, $x=$0.80. To avoid systematic errors, the beam energy…
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next…
We have investigated the formation and growth of nano sized ripple topography on ZnO thin films by 10 keV O1+ bombardment at impact angles of 80{\degree} and 60{\degree}, varying the ion fluence from 5{times}10^16 to 1{\times}10^18…
We study the self-organized ordering of nanostructures produced by ion-beam sputtering (IBS) of targets amorphizing under irradiation. By introducing a model akin to models of pattern formation in aeolian sand dunes, we extend consistently…
Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with…
Low-energy ion beam modification was proposed to create graphene on the top of the insulated diamond-like carbon films. In such low-temperature fabrication process the surface of the amorphous carbon could crystallize to graphene as a…
Four methods for determining the composition of low-level uranium- and thorium-chain surface contamination are presented. One method is the observation of Cherenkov light production in water. In two additional methods a position-sensitive…