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相关论文: Phonon-induced linewidths of graphene electronic s…

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We develop a theory for the electron-phonon interaction effects on the electronic properties of graphene. We analytically calculate the electron self-energy, spectral function and band velocity renormalization due to phonon-mediated…

材料科学 · 物理学 2009-11-13 Wang-Kong Tse , S. Das Sarma

We present first-principles calculations of the linewidths of low-energy quasiparticles in n-doped graphene arising from both the electron-electron and the electron-phonon interactions. The contribution to the electron linewidth arising…

First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the $\sigma$ band with $\lambda$ values of up to 0.9. Near the top of the $\sigma$ band, $\lambda$ is found to be $\approx 0.7$. This…

介观与纳米尺度物理 · 物理学 2017-02-28 Federico Mazzola , Thomas Frederiksen , Thiagarajan Balasubramanian , Philip Hofmann , Bo Hellsing , Justin W. Wells

We develop the theory of the non-adiabatic phonon self-energy arising from coupling to electrons with finite linewidths using the spectral representation of Green's functions. Our formalism naturally includes the contribution from the…

材料科学 · 物理学 2025-09-18 Cheol-Hwan Park

The aim of this model study of the electron-phonon coupling in graphene was to find out about the relative importance of the inter- and intraband scattering and which phonon modes are the most active. This was achieved by analyzing the…

介观与纳米尺度物理 · 物理学 2016-09-21 H. Toren , L. Samuelsson , B. Hellsing

A theory is presented for the strong enhancement of graphene-on-substrate bandgaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1eV can be formed for experimentally…

强关联电子 · 物理学 2012-04-25 J. P. Hague

The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with…

材料科学 · 物理学 2022-01-27 Zherui Han , Xiaolong Yang , Sean E. Sullivan , Tianli Feng , Li Shi , Wu Li , Xiulin Ruan

Indirect transitions of electrons in graphene and graphite are investigated by means of angle-resolved photoemission spectroscopy (ARPES) with several different incident photon energies and light polarizations. The theoretical calculations…

We obtained the spectral function of very high quality natural graphite single crystals using angle resolved photoelectron spectroscopy (ARPES). A clear separation of non-bonding and bonding bands and asymmetric lineshape are observed. The…

强关联电子 · 物理学 2009-11-13 C. S. Leem , B. J. Kim , Chul Kim , S. R. Park , T. Ohta , A. Bostwick , E. Rotenberg , H. -D. Kim , M. K. Kim , H. J. Choi , C. Kim

Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both…

材料科学 · 物理学 2013-03-26 Jia-An Yan , K. Varga , M. Y. Chou

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac…

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier…

The fine structure of the Dirac energy spectrum in graphene induced by electron-optical phonon coupling is investigated in the portion of the spectrum near the phonon emission threshold. The derived new dispersion equation in the immediate…

介观与纳米尺度物理 · 物理学 2013-07-29 S. M. Badalyan , F. M. Peeters

We present a computational study of the phonon linewidths in twisted bilayer graphene arising from electron-phonon interactions and anharmonic effects. The electronic structure is calculated using distance-dependent transfer integrals based…

介观与纳米尺度物理 · 物理学 2024-10-10 Shinjan Mandal , Indrajit Maity , H. R. Krishnamurthy , Manish Jain

We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at $\Gamma$ and K in one to three-layer graphene. It is found that due to the interlayer…

材料科学 · 物理学 2009-03-31 Jia-An Yan , W. Y. Ruan , M. Y. Chou

We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional…

介观与纳米尺度物理 · 物理学 2011-07-26 Pedro Venezuela , Michele Lazzeri , Francesco Mauri

We present a computational study of the two-phonon Raman spectra of silicene and graphene within a density-functional non-orthogonal tight-binding model. Due to the presence of linear bands close to the Fermi energy in the electronic…

介观与纳米尺度物理 · 物理学 2016-04-29 Valentin N. Popov , Philippe Lambin

We analyze renormalization of the pi band of n-doped epitaxial graphene on Ir(111) induced by electron-phonon coupling. Our procedure of extracting the bare band relies on recursive self-consistent refining of the functional form of the…

强关联电子 · 物理学 2014-07-25 Ivo Pletikosić , Marko Kralj , Milorad Milun , Petar Pervan

The Raman active G mode in graphene exhibits strong coupling to electrons, yet the comprehensive treatment of this interaction in the calculation of its temperature-dependent Raman spectrum remains incomplete. In this study, we calculate…

We investigate the Fano-type line shape of the Ba mode of Y_{1-x}Ca_xBa_2Cu_3O_{6+y} films observed in Raman spectra with A_1g symmetry. The line shape is described with an extended Fano formula that allows us to obtain the bare phonon…

超导电性 · 物理学 2015-06-25 A. Bock , S. Ostertun , K. -O. Subke
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