相关论文: Two-terminal spin-orbit torque magnetoresistive ra…

The application of Magnetic Random-Access Memory (MRAM) in computing-in-memory (CIM) has gained significant attention. However, existing designs often suffer from high energy consumption due to their reliance on complex analog circuits for…

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…

In this paper, the intrinsic physical characteristics of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons in neuromorphic architectures. Performance comparisons with the…

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…

Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…

We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant computing applications. With the presence of thermal fluctuation,…

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…

Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching.…

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…

Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…

Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…