相关论文: Electronic transport in high magnetic fields of th…

Temperature dependent transport measurements on ultrathin antiferromagnetic Mn films reveal a heretofore unknown non-universal weak localization correction to the conductivity which extends to disorder strengths greater than 100 k$\Omega$…

Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron co-sputtering. These films are single phase, have a strong (110) texture and a saturation magnetization of 4.95 uB/formula…

Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive…

The physics of weak itinerant ferromagnets is challenging due to their small magnetic moments and the ambiguous role of local interactions governing their electronic properties, many of which violate Fermi liquid theory. While magnetic…

The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…

Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a…

Spin transport of magnonic excitations in uniaxial insulating antiferromagnets (AFs) is investigated. In linear response to spin biasing and a temperature gradient, the spin transport properties of normal-metal--insulating…

A 75 nm-thick Fe0.5Pt0.5 film is a ferromagnetic metal showing striped magnetic domains in remanence at room temperature. The magnetoresistance is characterized by varying the external temperature and the in-plane magnetic field intensity,…

Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors, including weak localization and the Aharonov-Bohm effect. Although magnetic order can also strongly affect transport, the combination of coherence and…

We use the high sensitivity to magnetic flux of mesoscopic conductance fluctuations in large quantum dots to investigate changes in the two-dimensional electron dispersion caused by an in-plane magnetic field. In particular, changes in…

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…

Materials science has been intensively developed during the last 30 years. This is due, on the one hand, to an increasing demand of new materials for new applications and, on the other hand, to technological progress which allows for the…

Spin-polarized transport through a band-gap-matched ZnSe/Zn_{1-x}Mn_{x} Se/ZnSe/Zn_{1-x}Mn_{x}Se/ZnSe multilayer structure is investigated. The resonant transport is shown to occur at different energies for different spins owing to the…

We investigated the magnetotransport properties of mesoscopic platinum nanostructures (wires and rings) with sub-100 nm lateral dimensions at very low temperatures. Despite the strong spin-orbit interaction in platinum, oscillations of the…

Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an…

Here, we demonstrate an interplay between superconducting fluctuations and electron-electron interaction (EEI) by low temperature magnetotransport measurements for a set of 2D disordered TiN thin films. While cooling down the sample, a…

Quantum transport in inhomogeneous magnetic fields is investigated numerically in two-dimensional systems using the equation of motion method. In particular, the diffusion of electrons in random magnetic fields in the presence of additional…

The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…

We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…

In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…