相关论文: Exact solution for driven oscillations in plasmoni…
We present a quantum field theoretic formulation of acoustoelectric interactions in waveguide-like systems of arbitrary cross-section. Building on an open quantum systems approach, we derive a unified description of plasmon-phonon coupling…
Electrically tunable graphene plasmons are anticipated to enable strong light-matter interactions with resonant quantum emitters. However, plasmon resonances in graphene are typically limited to infrared frequencies, below those of optical…
An exact solution for electromagnetic wave diffraction at the junction of two-dimensional electron systems (2DES) is obtained and analyzed for electric field polarized along the edge. A special emphasis is paid to the metal-contacted and…
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The…
The generation of significant photocurrents observed in plasmonic metasurfaces is interesting from a fundamental point of view and promising for applications in plasmon-based electronics and plasmonic sensors with compact electrical…
Plasmonics, the science and technology of the interaction of light with metallic objects, is fundamentally changing the way we can detect, generate and manipulate light. Although the field is progressing swiftly, thanks to the availability…
Inelastic interaction of free-electrons with optical near fields has recently attracted attention for manipulating and shaping free-electron wavepackets. Understanding the nature and the dependence of the inelastic cross section on the…
We present an electrically driven plasmonic device consisting of a gold nanoparticle trapped in a gap between two electrodes. The tunneling current in the device generates plasmons, which decay radiatively. The emitted spectrum extends up…
We study the anomalous electromagnetic scattering in the homogenization regime, by a subwavelength thin layer of periodically distributed plasmonic nanoparticles on a perfect conducting plane. By using layer potential techniques, we derive…
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant…
Using large-scale, real-time quantum dynamics calculations, we present a detailed analysis of electronic excitation transfer (EET) mechanisms in a multi-particle plasmonic nanoantenna system. Specifically, we utilize real-time,…
We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the…
The current (voltage) responsivity of the superlattice-based diode detectors in the terahertz frequency band which includes the region of the polar optical phonon frequencies has been analyzed theoretically. Within the framework of the…
Terahertz time domain spectroscopy employing free-space radiation has frequently been used to probe the elementary excitations of low-dimensional systems. The diffraction limit blocks its use for the in-plane study of individual laterally…
We study gated field effect transistors (FETs) with fractal geometries under Dyakonov and Shur asymmetric boundary conditions, where the source and drain span the left and right edges of the device respectively. An AC THz potential…
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…
The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of developing sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and…
We present a theory for plasmonic crystal instability in a semiconductor field-effect transistor with a dual grating gate, designed with strong asymmetry in the crystal elementary cell. Under the action of a dc current bias, we demonstrate…
We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors…