相关论文: Anomalous Hall effect induced spin Hall magnetores…
RuO$_2$ is one of the most highlighted candidates for altermagnetism. However, the most recent muon spin spectroscopy and neutron studies demonstrated the absence of magnetic order in this system. The electronic structure of RuO$_2$ hints…
Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier…
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
In this work, we reveal the coexistence and correlation of a topological cusp anomaly in the planar Hall signal and a spin-flip scattering dominated positive longitudinal magnetoresistance (MR) across the entire temperature range below the…
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in…
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…
The anomalous Hall effect (AHE), which provides a bridgeway between the geometry of quantum wavefunctions and transport measurements, has been a key focus of intensive studies. In addition to the well-studied linear AHE, governed by the…
Magnetotransport is at the center of the spintronics. Mn3Sn, an antiferromagnet that has a noncollinear 120{\deg} spin order, exhibits large anomalous Hall effect (AHE) at room temperature. But such a behavior has been remained elusive in…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using…
Spin Hall magnetoresistance (SMR) measurements provide a way to probe the surface spin structure of insulating magnetic materials. Such measurements produce resistance signals of the form {$\Delta$}R {$\propto$}…
The anomalous Hall {\color{black} e}ffect (AHE) has emerged as a key indicator of time-reversal symmetry breaking (TRSB) and topological features in electronic band structures. Absent of a magnetic field, the AHE requires spontaneous TRSB…
Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak…
The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to…
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of…
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
The recent discoveries of surperisingly large anomalous Hall effect in chiral antiderromagnets have triggered extensive research efforts in various fields, ranging from topological condensed-matter physics to antiferromagnetic spintronics,…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…
The spin Hall magnetoresistance (SMR) of epitaxial BiFeO$_3$ thin films is investigated. SMR consistent with ferromagnetic interfacial states for BiFeO$_3$ films fabricated on (001) SrTiO$_3$ (R' BFO) and LaAlO$_3$ (T' BFO) substrates is…