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相关论文: The LDA-1/2 method applied to atoms and molecules

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Accurately calculating band gaps for given crystal structures is highly desirable. However, conventional first-principles calculations based on density functional theory (DFT) within the local density approximation (LDA) fail to predict…

材料科学 · 物理学 2025-07-28 Shota Tankano , Takao Kotani , Masao Obata , Kazunori Sato , Harutaka Saito , Tatsuki Oda

We use the Random Dispersion Approximation (RDA) to study the Mott-Hubbard transition in the Hubbard model at half band filling. The RDA becomes exact for the Hubbard model in infinite dimensions. We implement the RDA on finite chains and…

强关联电子 · 物理学 2008-11-27 S. Ejima , F. Gebhard , R. M. Noack

The dominantly orbital state method allows a semiclassical description of quantum systems. At the origin, it was developed for two-body relativistic systems. Here, the method is extended to treat two-body Hamiltonians and systems with three…

量子物理 · 物理学 2013-06-07 Claude Semay , Fabien Buisseret

The bandgap and band bowing parameter of semiconductor alloys are calculated with a fast and realistic approach. The method is a dielectric scaling approximation that is based on a scissor approximation. It adds an energy shift to the…

材料科学 · 物理学 2010-04-08 Titus Sandu , Radu I. Iftimie

We present a comparison of various approximations to self-consistency in the GW method, including the one-shot G0W0 method, different quasiparticle self-consistency schemes, and the fully self-consistent GW (scGW) approach. To ensure an…

强关联电子 · 物理学 2025-10-17 Gaurav Harsha , Vibin Abraham , Ming Wen , Dominika Zgid

Recently in the Wien2k code, the modified Becke-Johnson potential (mBJLDA) was implemented. As the authors [{\em Phys.Rev.Lett.} 102, 226401 (2009)] point, this potential reproduces the band gap of semiconductors with improved accuracy. In…

材料科学 · 物理学 2013-10-11 J. A. Camargo , R. Baquero

We present an approach based on density-functional theory for the calculation of fundamental gaps of both finite and periodic two-dimensional (2D) electronic systems. The computational cost of our approach is comparable to that of total…

材料科学 · 物理学 2021-08-11 Alberto Guandalini , Alice Ruini , Esa Räsänen , Carlo Andrea Rozzi , Stefano Pittalis

We report an all-electron, atomic orbital (AO) based, two-component (2C) implementation of the $GW$ approximation (GWA) for closed-shell molecules. Our algorithm is based on the space-time formulation of the GWA and uses analytical…

化学物理 · 物理学 2023-09-11 Arno Förster , Erik van Lenthe , Edoardo Spadetto , Lucas Visscher

We present a plane wave implementation of the G0W0 approximation within the projector augmented wave method code GPAW. The computed band gaps of ten bulk semiconductors and insulators deviate on average by 0.2 eV (~ 5 %) from the…

材料科学 · 物理学 2014-01-10 Falco Hüser , Thomas Olsen , Kristian S. Thygesen

Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the…

材料科学 · 物理学 2016-06-01 M. Tas , E. Sasioglu , I. Galanakis , C. Friedrich , S. Blugel

We have implemented the so called GW approximation (GWA) based on an all-electron full-potential Projector Augmented Wave (PAW) method. For the screening of the Coulomb interaction W we tested three different plasmon-pole dielectric…

材料科学 · 物理学 2007-05-23 B. Arnaud , M. Alouani

This paper investigates the influence of the basis set on the GW self-energy correction in the full-potential linearized augmented-plane-wave (LAPW) approach and similar linearized all-electron methods. A systematic improvement is achieved…

材料科学 · 物理学 2007-05-23 Christoph Friedrich , Arno Schindlmayr , Stefan Blügel , Takao Kotani

For a set of ten crystalline materials (oxides and semiconductors), we compute the electronic band structures using the Tran-Blaha [Phys. Rev. Lett. 102, 226401 (2009)] (TB09) functional. The band widths and gaps are compared with those…

We present the first principles results of point defect energetics in silicon calculated using the LDA+U method: a Hubbard type on-site interaction added to the local density approximation (LDA). The on-site Coulomb and exchange parameters…

材料科学 · 物理学 2007-05-23 Panchapakesan Ramanarayanan , Renat F. Sabirianov , Kyeongjae Cho

Shell DFT-1/2 is a fast band gap rectification method that is versatile for semiconductor supercell and superlattice calculations, which involves two cutoff radii that have to be optimized. Although such optimization is trivial in terms of…

材料科学 · 物理学 2025-03-27 Shanzhong Xie , Kan-Hao Xue , Zijian Zhou , Xiangshui Miao

First principle calculations based on LDA/GGA approximation for the exchange functional underestimate the position of the semi core 3d levels in GaX (X = N, P and As) semiconductors. A self-interaction correction scheme within the…

材料科学 · 物理学 2007-06-05 Roby Cherian , Priya Mahadevan , Clas Persson

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme,…

A first-principles computational study is presented of various phases of LiAlO$_2$.The $\beta$ and $\gamma$ tetrahedral phases are found to be very close in energy with the $\gamma$ phase having the lowest energy. The octahedral $\alpha$…

材料科学 · 物理学 2022-11-02 Phillip Popp , Walter R. L. Lambrecht

The ab initio $GW$ method is considered as the most accurate approach for calculating the band gaps of semiconductors and insulators. Yet its application to transition metal oxides (TMOs) has been hindered by the failure of traditional…

材料科学 · 物理学 2017-02-08 Georgy Samsonidze , Cheol-Hwan Park , Boris Kozinsky

A LMTO implementation of Aversa and Sipe's length-gauge formalism for calculating the full frequency dependent second-harmonic generation in the independent particle approximation is presented. It is applied to GaAs, GaP, 3C-SiC, c-BN and…

材料科学 · 物理学 2008-02-03 Sergey N. Rashkeev , Walter R. L. Lambrecht , Benjamin Segall