相关论文: Spin-orbit torque in completely compensated synthe…
The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…
We theoretically study spin-transfer torque (STT) in a graphene system with spin-orbit coupling (SOC). We consider a graphene-based junction where the spin-orbit coupled region is sandwiched between two ferromagnetic (F) segments. The…
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…
Resonant activation of a synthetic antiferromagnet (SAF) is known to result in a dynamic running state, where the SAF's symmetric spin-flop pair continuously rotates between the two antiparallel ground states of the system, with the two…
Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in…
An experimental study of current-induced magnetization reversal of the Ru/Co/Ru and Ru/Co/Ru/W structures was carried out. In the considered structures, due to the small value of the coercive force comparable in magnitude to the Oersted…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced…
In metallic ferromagnets, the spin-transfer torque and spin-motive force are known to exhibit a reciprocal relationship. Recent experiments on ferromagnets with strong spin-orbit coupling have revealed a rich complexity in the interaction…
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…
Current induced spin-orbit torques (SOTs) in ferromagnet/non-magnetic metal heterostructures open vast possibilities to design spintronic devices to store, process and transmit information in a simple architecture. It is a central task to…
The discovery of altermagnetism offers new opportunities for exploring novel quantum states and developing spintronic devices for enabling momentum dependent spin splitting in compensated systems, while zero net magnetization limit its…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional…
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit…
Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and antiferromagnets (absence of net magnetization) for spintronics applications. In…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…