相关论文: Spin-orbit torque in completely compensated synthe…
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
Altermagnets combine antiferromagnetic order with ferromagnet-like spin splitting, a duality that unlocks ultrafast spin-dependent responses. This unique property creates unprecedented opportunities for spin-current generation, overcoming…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current…
Light transition metals have recently emerged as a sustainable material class for efficient spin-charge interconversion. We report measurements of current-induced spin-orbit torques generated by Ni$_{1-x}$Cu$_{x}$ alloys in perpendicularly…
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…
We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the…
The interlayer exchange coupling confers specific properties to Synthetic Antiferromagnets that make them suitable for several applications of spintronics. The efficient use of this magnetic configuration requires an in-depth understanding…
We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO capping layer. By using two different…
Using the linear response formalism for the spin-orbit torque (SOT) we compute from first principles the SOT in a system of two layers of L1$_0$-FePt(001) deposited on an fcc Pt(001) substrate of varying thickness. We find that at room…
We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed…
We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt…
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
We theoretically investigate the supercurrent-induced magnetization dynamics of a two-dimensional lattice of ferromagnetically ordered spins placed on a conventional superconductor with broken spatial inversion symmetry and strong…
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice,…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…