相关论文: Raman Spectra and Strain Effects in Bismuth Oxycha…
By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding…
We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the…
Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak. As the…
The ternary chalcogenide Bi2Rh3Se2 was found to be a charge density wave (CDW) superconductor with a 2*2 periodicity. The key questions regarding the underlying mechanism of CDW state and its interplay with lattice and electronic properties…
Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental…
The recently discovered layered BiS2-based superconductors have attracted a great deal of interest due to their structural similarity to cuprate and iron-pnictide superconductors. We have performed Raman scattering measurements on two…
Chalcogenides materials are being considered as some of the most promising systems for energy harvesting and energy conversion. Among them, the orthorhombic family of compounds X2Y3 (with X= Bi, Sb and Y= S, Se) has attracted special…
2H-TaSe2 is a model transition metal dichalcogenide material that develops charge density waves (CDWs).Here we present variable-temperature Raman spectroscopy study on both incommensurate charge density waves (ICDW) and optical phonon modes…
The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…
Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…
2D bismuth oxyselenide (Bi2O2Se) with high electron mobility shows great potential for nanoelectronics. Although in-plane properties of Bi2O2Se have been widely studied, its out-ofplane electrical transport behavior remains elusive, despite…
Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however…
The use of simple, fast and economic experimental tools to characterize low-dimensional materials is an important step in the process of democratizing the use of such materials in laboratories around the world. Raman spectroscopy has arisen…
Intercalation offers a promising way to alter the physical properties of two-dimensional (2D) layered materials. Here we investigate the electronic and vibrational properties of 2D layered MoSe$_2$ intercalated with atomic manganese at…
We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due…
We report a comparative study of rigid layer Raman-active modes in $N$-layer transition metal dichalcogenides. Trigonal prismatic (2Hc, such as MoSe$_2$, MoTe$_2$, WS$_2$, WSe$_2$) and distorted octahedral (1T', such as ReS$_2$ and…
Bismuth oxyselenide (Bi$_2$O$_2$Se), a novel quasi-2D charge-carrying semiconductor, is hailed as one of the best emerging platforms for the next generation semiconductor devices. Recent efforts on developing diverse Bi$_2$O$_2$Se…
The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and…
Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi2O2Se flakes is rather challenging,…
Two-dimensional (2D) Fe-chalcogenides have emerged with rich structures, magnetisms and superconductivities, which sparked the growing research interests in the torturous transition mechanism and tunable properties for their potential…