相关论文: Optoelectronic spin memories of electrons in semic…

We show storage of the circular polarisation of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently readout through the…

Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification…

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…

We report on time-resolved photoluminescence from semiconductor microcavities showing that an optically controllable mechanism exists to turn on and off memory effects in a polariton system. By increasing the laser pumping pulse intensity…

We report millisecond-range spin memory of resident electrons in an ensemble of InP quantum dots (QDs) under a small magnetic field of 0.1 T applied along the optical excitation axis at temperatures up to about 5 K. A pump-probe…

Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…

Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating…

New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…

The coherent spin dynamics of resident carriers, electrons and holes, in semiconductor quantum structures is studied by periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing…

The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin…

We suggest a new spin orientation mechanism for localized electrons: $dynamic~electron~spin~polarization~provided~by~nuclear~spin~fluctuations$. The angular momentum for the electrons is gained from the nuclear spin system via the hyperfine…

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…

Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…

We calculate the dynamical fluctuation spectrum of electronic spins in a semiconductor under a steady-state illumination by light containing polarization squeezing correlations. Taking into account quasi-particle lifetime and spin…

Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of…

Absorption of circularly polarized light in semiconductors is known to result in optical orientation of electron and hole spins. It has been shown here that in semiconductor quantum well structures spin orientation of carriers can be…

We propose to use optical detection of magnetic resonance (ODMR) to measure the decoherence time T_{2} of a single electron spin in a semiconductor quantum dot. The electron is in one of the spin 1/2 states and a circularly polarized laser…

The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven…

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the…