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相关论文: Nonequilibrium Mean-Field Theory of Resistive Phas…

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Motivated by the resistive switchings in transition-metal oxides (TMOs) induced by a voltage bias, we study the far-from-equilibrium dynamics of an electric-field-driven strongly-correlated model featuring a first-order insulator-to-metal…

强关联电子 · 物理学 2023-05-26 Manuel I. Díaz , Jong E. Han , Camille Aron

The metal--insulator phase transition is considered on the basis of Ginzburg-Landau type equations with two different order parameters. An inclusion of magnetic field in this picture is an important step for understanding of behavior of the…

强关联电子 · 物理学 2016-07-21 Leonid Dubovskii

The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T-dependence is observed for T < 50 K, which is either metallic, or insulating,…

介观与纳米尺度物理 · 物理学 2010-07-28 L. Zhang , Y. Zhang , M. Khodas , T. Valla , I. A. Zaliznyak

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…

The nonlinear $\sigma$-model for disordered interacting electrons is studied in spatial dimensions $d>4$. The critical behavior at the metal-insulator transition is determined exactly, and found to be that of a standard…

凝聚态物理 · 物理学 2009-10-22 T. R. Kirkpatrick , D. Belitz

Recent advances in many-body physics have made it possible to study correlated electron systems at the two-particle level. In Dynamical Mean-Field theory, it has been shown that the metal-insulator phase diagram is closely related to the…

强关联电子 · 物理学 2022-06-09 Erik G. C. P. van Loon

In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of…

强关联电子 · 物理学 2017-09-04 Flavio Giorgianni , Carlo Vicario , Mostafa Shalaby , Junqiao Wu , Kai Liu , Kevin Wang , Christoph P. Hauri

Recently the memristive electrical transport properties in NbO$_2$ have attracted much attention for their promising application to the neuromorphic computation. At the center of debates is whether the metal-to-insulator transition (MIT)…

介观与纳米尺度物理 · 物理学 2022-10-20 Samuel W. Olin , S. Abdel Razek , L. F. J. Piper , Wei-Cheng Lee

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

The insulator-to-metal transition (IMT) in strongly correlated materials, such as vanadium dioxide (VO2), offers a transformative platform for next-generation adaptive electronics and neuromorphic computing. However, harnessing this…

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

We study the antiferromagnetic metal to antiferromagnetic insulator using dynamical mean field theory and exact diagonalization methods. We find two qualitatively different behaviors depending on the degree of magnetic correlations. For…

强关联电子 · 物理学 2009-10-31 R. Chitra , G. Kotliar

The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…

介观与纳米尺度物理 · 物理学 2009-10-31 B. L. Altshuler , D. L. Maslov , V. M. Pudalov

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi

Time-dependent nonequilibrium properties of a strongly correlated electron system driven by large electric fields is obtained by means of solving the time-dependent Schr\"odinger equation for the many-body wave function numerically in one…

强关联电子 · 物理学 2009-11-10 Takashi Oka , Ryotaro Arita , Hideo Aoki

On demand current-driven insulator-to-metal transition (IMT) is pivotal for the next generation of energy-efficient and scalable microelectronics. IMT is a key phenomenon observed in various quantum materials, and it is enabled by the…

The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…

强关联电子 · 物理学 2016-08-31 M. Potthoff , W. Nolting

In order to investigate photoinduced insulator-metal transitions observed in correlated electron systems, we propose a new theoretical method, where we combine a Floquet-matrix method for AC-driven systems with the dynamical mean-field…

强关联电子 · 物理学 2015-05-13 Naoto Tsuji , Takashi Oka , Hideo Aoki
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