相关论文: Field induced nucleation in nano-structures

This paper reports the impacts of temperature variation on the inference accuracy of pre-trained all-ferroelectric FinFET deep neural networks, along with plausible design techniques to abate these impacts. We adopted a pre-trained…

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…

Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical…

We report transport measurements on superconducting wire networks which provide the first experimental evidence of a new localization phenomenon induced by magnetic field on a 2D periodic structure. In the case of a superconducting wave…

Brain-inspired neuromorphic computing is a promising path towards next generation analogue computers that are fundamentally different compared to the conventional von Neumann architecture. One model for neuromorphic computing that can mimic…

It is demonstrated theoretically that a thin layer of an anisotropic antiferromagnetic (AFM) insulator can effectively conduct spin current by excitation of a pair of evanescent AFM spin wave modes. The spin current flowing through the AFM…

Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…

We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field the temperature dependent resistance R(T) saturates at a finite resistance towards low temperatures, which results from…

For forty years researchers on ferroelectric switching have used the Kay-Dunn theory to model the thickness-dependence of the coercive field; it works surprisingly well, despite the fact that it is based upon homogeneous nucleation and a…

Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with…

The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage…

Ferromagnetic insulators can induce a strong exchange field in an adjacent superconductor via the magnetic proximity effect. This manifests as spin-splitting of the BCS density of states of the superconductor, an important ingredient for…

Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for…

Electric-field-driven electrolyte transport through nanoporous membranes is important for applications including osmotic power generation, sensing and iontronics. We derive an analytical equation in the Debye--H\"uckel regime and a…

The contribution of a built-in electric field to ferroelectric phase transition in asymmetric ferroelectric tunnel junctions is studied using a multiscale thermodynamic model. It is demonstrated in details that there exists a critical…

The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic…

We use field-cycling-assisted dynamic nuclear polarization and continuous radio-frequency (RF) driving over a broad spectral range to demonstrate magnetic-field-dependent activation of nuclear spin transport from strongly-hyperfine-coupled…

The implementation of quantum networks involving quantum memories and photonic channels without the need for cryogenics would be a major technological breakthrough. Nitrogen-vacancy centers have excellent spin properties even at room…