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Transition-edge sensors (TESs) can be used in high-resolution photon detection, exploiting the steep slope of the resistance in the superconducting-to-normal transition edge. Normal metal bars on the TES film are commonly used to engineer…
Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT)…
Bandgap engineering of low-dimensional materials forms a robust basis for advancements in optoelectronic technologies. Platinum diselenide (PtSe2) material exhibits a transition from semi-metal to semiconductor (SM-SC) when going from bulk…
In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compounds with black-phosphorus like structure such as the…
Interfacial superconductivity (IS) has been a topic of intense interest in the condensed matter physics, due to its unique properties and exotic photoelectrical performance. However, there are few reports about IS systems consisting of two…
We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…
A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However,…
Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures…
Continuous monitoring of voltages ranging from tens to hundreds of kV over environmental conditions, such as temperature, is of great interest in power grid applications. This is typically done via instrument transformers. These…
Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high charge-carrier mobility…
We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman…
Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic…
Previously, it has been shown that the strength of the perpendicular magnetic anisotropy (PMA) of thin Palladium-Cobalt bi-layer films can be modified when hydrogen gas is absorbed by the Palladium (Pd) layer. In our recent work we showed…
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film…
We present results on the fabrication of chemiresistive nanocomposite NiO:Pd hydrogen sensors, which are able to detect hydrogen concentrations as low as 300 ppb in air, operating at temperatures in the 115-145 C range. Thin NiO films were…
The thermoelectric properties of the three pyrite-type IIB-VIA2 dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated and compared with those of the prototype ZnSe2 in order to optimize their thermoelectric properties.…
Spin-phonon interactions in 2D magnetic materials are crucial in advancing next-generation spintronic devices. Therefore, identifying new materials with significant spin-phonon interactions is of great importance. In this context, MnSe,…
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer…
Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration…
Increasing demands for renewable sources of energy has been a major driving force for developing efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for…