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相关论文: Gate-dependent vacancy diffusion in graphene

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The optical properties of graphene are strongly affected by electron-electron (e-e) and electron-hole (e-h) interactions. Here we tune these many-body interactions through varying the density of free charge carriers. Measurements from the…

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…

We investigate thermoelectric transport in monolayer graphene across a finite complex barrier within a Landauer scattering framework. Solving the Dirac-Weyl problem exactly, we show that the imaginary part of the barrier renders the…

介观与纳米尺度物理 · 物理学 2026-05-20 Daniel A. Bonilla , Juan A. Cañas , J. C. Pérez-Pedraza , A. Martín-Ruiz

We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding…

材料科学 · 物理学 2018-10-15 Sehoon Oh , Michael F. Crommie , Marvin L. Cohen

Time-dependent density-functional theory simulations are performed to examine the effects of varying incident points and kinetic energies of hydrogen atom projectiles on a graphene-like structure. The simulations reveal that the incident…

材料科学 · 物理学 2024-12-11 Samuel S. Taylor , Nicholas Skoufis , Hongbo Du , Cody Covington , Kalman Varga

Magnetic properties of a single vacancy in graphene is a relevant and still unsolved problem. The experimental results point to a clearly detectable magnetic defect state at the Fermi energy, while several calculations based on density…

介观与纳米尺度物理 · 物理学 2017-10-11 A. M. Valencia , M. J. Caldas

The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have…

介观与纳米尺度物理 · 物理学 2015-01-09 I. Kupcic

Established theoretical studies of diffusion in rugged (or rough) potential surfaces have largely focused on quenched energy landscapes. Here we study diffusion on a rugged energy landscape in the presence of dynamic disorder, a situation…

统计力学 · 物理学 2026-01-28 Biman Bagchi

We investigate the mobility of structural defects, adatoms, and defect-adatom combinations in self-supporting graphene subjected to keV ion irradiation. In the first scenario, homogeneous irradiation using 20 keV Ar$^+$ ions at a dose of $3…

材料科学 · 物理学 2025-03-29 Tuan T. Tran , Per O. Å. Persson , Ngan Pham , Radek Holenak , Daniel Primetzhofer

Two-dimensional (2D) materials display nanoscale dynamic ripples that significantly impact their properties. Defects within the crystal lattice are the elementary building blocks to tailor the material's morphology. While some studies have…

材料科学 · 物理学 2025-03-11 Fabian L. Thiemann , Camille Scalliet , Erich A. Müller , Angelos Michaelides

The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the…

介观与纳米尺度物理 · 物理学 2013-04-02 Ming-Hao Liu

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…

介观与纳米尺度物理 · 物理学 2015-06-24 Bor-Yuan Jiang , Michael M. Fogler

We use first-principles density-functional calculations to determine the frequency shift of the A$'_1$-${\bf K}$ phonon (Raman D band) in monolayer graphene, as a function of the charge doping. A detailed DFT study on the electron-phonon…

材料科学 · 物理学 2007-05-23 Srijan Kumar Saha , U. V. Waghmare , H. R. Krishnamurthy , A. K. Sood

The interplay between different types of disorder and electron-electron interactions in graphene planes is studied by means of Renormalization Group techniques. The low temperature properties of the system are determined by fixed points…

强关联电子 · 物理学 2009-11-10 T. Stauber , F. Guinea , M. A. H. Vozmediano

We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-B\"uttiker formalism within the tight-binding approximation. Calculations reveal a…

介观与纳米尺度物理 · 物理学 2014-06-05 Fernando Gargiulo , Oleg V. Yazyev

Transmission profiles in bilayer graphene have been studied theoretically in presence of a pair of delta function magnetic barriers. Two types of asymmetric Fano resonances are discussed in connection to the electronic cloaking effect in…

介观与纳米尺度物理 · 物理学 2017-11-21 S. Maiti , R. Biswas , C. Sinha

Graphene extraordinary strength, stiffness and lightness have generated great expectations towards its application in flexible electronics and as mechanical reinforcement agent. However, the presence of lattice defects, unavoidable in…

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of…

Magnetic properties of a single vacancy in graphene is a relevant and still much discussed problem. The experimental results point to a clearly detectable magnetic defect state at the Fermi energy, while calculations based on density…

介观与纳米尺度物理 · 物理学 2017-10-31 Ana M. Valencia , Marilia J. Caldas

Real-world samples of graphene often exhibit various types of out-of-plane disorder -- ripples, wrinkles and folds -- introduced at the stage of growth and transfer processes. These complex out-of-plane defects resulting from the interplay…

介观与纳米尺度物理 · 物理学 2024-08-30 Yifei Guan , Oleg V. Yazyev