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相关论文: Mott transition with Holographic Spectral function

200 篇论文

We investigate the Mott transition in a two-band Hubbard-Kanamori model using Dynamical Mean-Field Theory (DMFT) with the Density Matrix Renormalization Group (DMRG) and the Numerical Renormalization Group (NRG) as impurity solvers. Our…

The equation for the electron Green's function of the fermionic Hubbard model, derived using the strong coupling diagram technique, is solved self-consistently for the near-neighbor form of the kinetic energy and for half-filling. In this…

强关联电子 · 物理学 2015-06-11 A. Sherman

The Mott transition in a two-band Hubbard model involving subbands of different widths is studied as a function of temperature using dynamical mean field theory combined with exact diagonalization. The phase diagram is shown to exhibit two…

强关联电子 · 物理学 2009-11-11 A. Liebsch

We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…

强关联电子 · 物理学 2007-05-23 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella

We solve the Dynamical Mean Field Theory equations for the Hubbard model away from the particle-hole symmetric case using the Density Matrix Renormalization Group method. We focus our study on the region of strong interactions and finite…

强关联电子 · 物理学 2007-05-23 D. J. Garcia , E. Miranda , K. Hallberg , M. J. Rozenberg

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

The 2D half-filled Hubbard model is studied by a nonperturbative analytic theory of correlator projection. The original dynamical mean-field approximation (DMFA) is reproduced at the first-order projection and then improved by systematic…

强关联电子 · 物理学 2009-11-07 Shigeki Onoda , Masatoshi Imada

Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth $\Delta$ to the Hubbard repulsion…

强关联电子 · 物理学 2019-05-21 A. Sherman

We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field…

强关联电子 · 物理学 2009-09-22 Eberhard Jakobi , Nils Blümer , Peter van Dongen

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of…

高能物理 - 理论 · 物理学 2015-10-26 Yi Ling , Peng Liu , Chao Niu , Jian-Pin Wu

Inspired by recent experiments on 3He films between one and two atoms thick, we consider a bilayer Hubbard model on a triangular lattice. Our results are obtained in the framework of a cluster dynamical mean-field calculation with a quantum…

强关联电子 · 物理学 2011-04-14 K. S. D. Beach , F. F. Assaad

We describe the two-dimensional Mott transition in a Hubbard-like model with nearest neighbors interactions based on a recent solution to the Zamolodchikov tetrahedron equation, which extends the notion of integrability to two-dimensional…

强关联电子 · 物理学 2008-12-10 Federico L. Bottesi , Guillermo R. Zemba

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

We consider the interaction-driven Mott transition at zero temperature from the viewpoint of microscopic Fermi liquid theory. To this end, we derive an exact expression for the Landau parameters within the dynamical mean-field theory (DMFT)…

We study theoretically the Mott metal-insulator transition for a system of fermionic atoms confined in a three-dimensional optical lattice and a harmonic trap. We describe an inhomogeneous system of several thousand sites using an…

强关联电子 · 物理学 2008-05-06 R. W. Helmes , T. A. Costi , A. Rosch

In an earlier work we developed a holographic theory for the phase transition between bosonic symmetry-protected topological (SPT) states. This paper is a continuation of it. Here we present the holographic theory for fermionic SPT phase…

强关联电子 · 物理学 2019-12-12 Lokman Tsui , Yen-Ta Huang , Dung-Hai Lee

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

We investigate the Mott transition in the Kagom\'e lattice Hubbard model using a cluster extension of dynamical mean field theory. The calculation of the double occupancy, the density of states, the static and dynamical spin correlation…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Norio Kawakami , Hirokazu Tsunetsugu

We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…