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相关论文: Quasi-two-dimensional thermoelectricity in SnSe

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Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance…

In this study, we investigate a novel hybrid borocarbonitrides (bpn-BCN) 2D material inspired by recent advances in carbon biphenylene synthesis, using first-principles calculations and semi-classical Boltzmann transport theory. Our…

材料科学 · 物理学 2025-01-28 Ajay Kumar Parbati Senapati , Prakash Parida

We present systematic theoretical results on thermoelectric effects in semimetals based on the variational method of the linearized Boltzmann equation. Inelastic electron-hole scattering is known to play an important role in the unusual…

强关联电子 · 物理学 2023-03-31 Keigo Takahashi , Hiroyasu Matsuura , Hideaki Maebashi , Masao Ogata

Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such…

材料科学 · 物理学 2015-01-06 Ruixiang Fei , Alireza Faghaninia , Ryan Soklaski , Jia-An Yan , Cynthia Lo , Li Yang

Bismuth selenide (Bi2Se3) is a prototypical three-dimensional topological insulator whose Dirac surface states have been extensively studied theoretically and experimentally. Surprisingly little, however, is known about the energetics and…

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…

介观与纳米尺度物理 · 物理学 2014-07-10 Jing Wu , Hennrik Schmidt , Amara Kiran Kumar , Xiangfan Xu , Goki Eda , Barbaros Özyilmaz

Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here…

材料科学 · 物理学 2019-05-22 Stephane Yu Matsushita , Khuong Kim Huynh , Katsumi Tanigaki

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…

介观与纳米尺度物理 · 物理学 2014-09-04 F. Giazotto , J. W. A. Robinson , J. S. Moodera , F. S. Bergeret

The normal-state transport properties of superconducting infinite-layer nickelates are investigated within an interacting three-orbital model. It includes effective Ni-$d_{z^2}$, Ni-$d_{x^2-y^2}$ bands as well as the self-doping band degree…

超导电性 · 物理学 2023-06-14 Steffen Bötzel , Ilya M. Eremin , Frank Lechermann

The Hall and Seebeck coefficients, electrical resistivity and thermal conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K. Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated electrical resistivity…

材料科学 · 物理学 2013-03-18 Andrew F. May , Michael A. McGuire , Hsin Wang

We report measurements of the electrical resistivity ($\rho$) and thermoelectric power (S) in a thin film of strained single-crystalline $\alpha$-Sn grown by molecular beam epitaxy on an insulating substrate. The temperature (T) dependence…

强关联电子 · 物理学 2024-06-03 Md Shahin Alam , Alexandr Kazakov , Mujeeb Ahmad , Rajibul Islam , Fei Xue , Marcin Matusiak

Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis…

材料科学 · 物理学 2011-06-08 S. Y. Liu , X. L. Lei , Norman J. M. Horing

Heavily doped semiconductors are by far the most studied class of materials for thermoelectric applications in the past several decades. They have Seebeck coefficient values which are 2-3 orders of magnitude higher than metals, making them…

材料科学 · 物理学 2019-09-11 Maxime Markov , Emad Rezaei , Safoura Nayeb Sadeghi , Keivan Esfarjani , Mona Zebarjadi

Upon chemical substitution of oxygen with fluor, LaMnAsO has been electron-doped in experiments, resulting in samples with remarkably high Seebeck coefficients of around -300$\mu VK^{-1}$ at room temperature and 3% doping. Within the…

强关联电子 · 物理学 2019-07-31 Manuel Zingl , Gernot J. Kraberger , Markus Aichhorn

Heusler-type Fe2VAl compound is a promising thermoelectric candidate with non-magnetic ground state. The present work investigates the Seebeck coefficient (S) of Fe2VAl in the temperature region 300 to 620 K with the help of experimental…

材料科学 · 物理学 2018-09-20 Shamim Sk , P. Devi , Sanjay Singh , Sudhir K Pandey

Tin Selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer…

材料科学 · 物理学 2017-10-11 Hansika I. Sirikumara , Thushari Jayasekera

We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a…

介观与纳米尺度物理 · 物理学 2016-06-22 K. Fukutani , T. Sato , P. V. Galiy , K. Sugawara , T. Takahashi

We report superconductivity in Sn$_{x}$NbSe$_{2-\delta}$, a topological nodal-line semimetal candidate with a noncentrosymmetric crystal structure. The superconducting transition temperature $T_{c}$ of this compound is extremely sensitive…

We present measurements of resistivity and thermopower of Fe1+xTe1-ySey single crystalline samples with y=0, 0.1, 0.2, 0.3 and 0.45 in zero field and in a magnetic field B=8T. We propose a qualitative analysis of the temperature behavior of…

超导电性 · 物理学 2009-12-10 I. Pallecchi , G. Lamura , M. Tropeano , M. Putti , R. Viennois , E. Giannini , D. Van der Marel

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride,…