中文
相关论文

相关论文: Colossal magnetoresistance in a Mott insulator via…

200 篇论文

Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation…

强关联电子 · 物理学 2012-07-05 E. J. Wildman , J. M. S. Skakle , N. Emery , A. C. Mclaughlin

Mott insulators can be portrayed as "unsuccessful metals": systems in which a strong Coulomb repulsion prevents charge conduction notwithstanding the metal-like density of conduction electrons. The possibility to unlock such large density…

强关联电子 · 物理学 2016-10-24 G. Mazza , A. Amaricci , M. Capone , M. Fabrizio

Recent experiments have shown that some colossal magnetoresistance (CMR) materials exhibit a percolation transition. The conductivity exponent varies substantially with or without an external magnetic field. This finding prompted us to…

强关联电子 · 物理学 2009-11-07 Ye Xiong , Shun-Qing Shen , X. C. Xie

The study of the manganese oxides, widely known as manganites, that exhibit the ``Colossal'' Magnetoresistance (CMR) effect is among the main areas of research within the area of Strongly Correlated Electrons. After considerable theoretical…

强关联电子 · 物理学 2009-10-31 Elbio Dagotto , Takashi Hotta , Adriana Moreo

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

Colossal electroresistance (CER) in manganites, i.e., a large change in electrical resistance under the influence of either an applied electric field or an applied electric current, has often been described as complimentary to the colossal…

强关联电子 · 物理学 2021-08-11 Rafikul Ali Saha , Abhisek Bandyopadhyay , Irene Schiesaro , Carlo Meneghini , Sugata Ray

Recently, a colossal magnetoresistance (CMR) was observed in EuCd$_2$P$_2$ -- a compound that does not fit the conventional mixed-valence paradigm. Instead, experimental evidence points at a resistance driven by strong magnetic fluctuations…

介观与纳米尺度物理 · 物理学 2022-12-14 Eliot Heinrich , Thore Posske , Benedetta Flebus

We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott…

Colossal magnetoresistance (CMR) is an extraordinary enhancement of the electric conductivity in the presence of a magnetic field. It is conventionally associated with a field-induced spin polarization, which drastically reduces spin…

强关联电子 · 物理学 2022-10-17 Yu Zhang , Yifei Ni , Hengdi Zhao , Sami Hakani , Feng Ye , Lance DeLong , Itamar Kimchi , Gang Cao

We present a detailed NMR study of the insulator to metal transition induced by an applied pressure $p$ in the A15 phase of Cs$_{3}$C$_{60}$. We evidence that the insulating antiferromagnetic (AF) and superconducting (SC) phases only…

强关联电子 · 物理学 2017-06-14 H. Alloul , P. Wzietek , T. Mito , D. Pontiroli , M. Aramini , M. Riccò , J. P. Itié , E. Elkaim

We investigate the magnetic properties and Mott transition in the Hubbard model for weakly coupled chains on the anisotropic triangular lattice. Taking into account 120$^\circ$ N\'eel, and collinear orderings, the magnetic phase diagram is…

强关联电子 · 物理学 2015-06-22 Atsushi Yamada

Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…

材料科学 · 物理学 2022-03-24 Rui Niu , W. K. Zhu

Colossal magnetoresistance (CMR) and electroresistance (CER) induced by the electric field in spinel multiferroic CdCr2S4 are reported. It is found that a metal-insulator transition (MIT) in CdCr2S4 is triggered by the electrical field. In…

强关联电子 · 物理学 2015-05-18 C. P. Sun , C. L. Huang , C. C. Lin , J. L. Her , C. J. Ho , J. -Y. Lin , H. Berger , H. D. Yang

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen…

The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…

The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson…

强关联电子 · 物理学 2016-10-26 M. A. Timirgazin , P. A. Igoshev , A. K. Arzhnikov , V. Yu. Irkhin

We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…

量子气体 · 物理学 2015-02-03 Ahmet Keleş , M. Ö. Oktel

Turning a pristine Mott insulator into a correlated metal by chemical doping is a common procedure in strongly correlated materials physics, e.g. underlying the phenomenology of high-$T_c$ cuprates. The ruthenate bilayer compound…

强关联电子 · 物理学 2020-09-29 Frank Lechermann , Qiang Han , Andrew J. Millis

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In…

强关联电子 · 物理学 2009-09-11 C. Vaju , L. Cario , B. Corraze , E. Janod , V. Dubost , T. Cren , D. Roditchev , D. Braithwaite , O. Chauvet