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相关论文: Robust memristors based on layered two-dimensional…

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Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform…

Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…

材料科学 · 物理学 2017-05-24 Daniele Stradi , Nick R. Papior , Mads Brandbyge

The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable…

介观与纳米尺度物理 · 物理学 2018-09-05 A. P. Rooney , Z. Li , W. Zhao , A. Gholinia , A. Kosikov , G. Auton , F. Ding , R. V. Gorbachev , R. J. Young , S. J Haigh

Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes…

Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D…

Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at…

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions…

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are…

超导电性 · 物理学 2021-03-10 Jing-Yang You , Bo Gu , Gang Su , Yuan Ping Feng

The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity…

介观与纳米尺度物理 · 物理学 2021-10-20 Juan F. Sierra , Jaroslav Fabian , Roland K. Kawakami , Stephan Roche , Sergio O. Valenzuela

Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a…

Two-dimensional (2D) materials with extraordinary electrical properties, hold promising for large-scale, flexible electronics. However, their device performance could be hindered due to the excessive defects introduced via traditional…

Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities.…

介观与纳米尺度物理 · 物理学 2018-11-13 N. Peimyoo , M. D. Barnes , J. D. Mehew , A. De Sanctis , I. Amit , J. Escolar , K. Anastasiou , A. P. Rooney , S. J. Haigh , S. Russo , M. F. Craciun , F. Withers

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…

计算物理 · 物理学 2023-03-14 Samuel Aldana , Jakub Jadwiszczak , Hongzhou Zhang

Resistive memory based on 2D WS2, MoS2, and h-BN materials has been studied, including experiments and simulations. The influences with different active layer thicknesses have been discussed, including experiments and simulations. The…

材料科学 · 物理学 2023-10-03 Ying-Chuan Chen , Yu-Ting Chao , Edward Chen , Chao-Hsin Wu , Yuh-Renn Wu

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDs), possess intrinsic van der Waals gap at the layer interface allowing for remarkable tunability of the optoelectronic features via external intercalation of…

材料科学 · 物理学 2024-11-25 Srihari M. Kastuar , Christopher Rzepa , Srinivas Rangarajan , Chinedu E. Ekuma

Quantum devices, which rely on quantum mechanical effects for their operation, may offer advantages, such as reduced dimensions, increased speed, and energy efficiency, compared to conventional devices. However, quantum phenomena are…

介观与纳米尺度物理 · 物理学 2024-12-19 Manh-Ha Doan , Peter Bøggild

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating graphene within hBN flakes, forming a protective van der…