相关论文: Radiation Hardness of Thin Low Gain Avalanche Dete…
We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that…
InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near-infrared (NIR) including the fibre communication bands (1.31/1.55 $\mu$m). However, to suppress afterpulse noise due to trapped avalanche charge,…
We have developed a novel technique for the measurement of the size of avalanche fluctuations of gaseous detectors using a gating device (gating foil) prepared for the time projection chamber in the international linear collider experiment…
We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for…
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be…
A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests…
Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of…
4H-Silicon Carbide, when considered as a material for the fabrication of Low Gain Avalanche Detectors for particle timing and position measurement, offers potential advantages over Silicon. We discuss an ongoing study of this material aimed…
The possibility of efficient collection and detection of vacuum ultraviolet light as emitted by argon, krypton, and xenon gas is studied. Absolute quantum efficiencies of large area avalanche photodiodes (LAAPDs) are derived at these…
We characterized the front-end electronics used to process high-frequency signals from low-gain avalanche diodes (LGADs) at the Fermilab Test Beam Facility. LGADs are silicon detectors employed for charged particle tracking, offering…
Electron emission properties of two-phase Ar avalanche detectors are studied. The detectors investigated comprised a liquid Ar or Ar+N2 layer followed by a multi-GEM multiplier operated in the saturated vapour at 84 K. Two components of the…
A closed-form approximate expression is presented for the short time-frame development of silicon diode sensor signals in the context of high frame-rate detection of incident X-ray fluxes, in the limit that the X-ray absorption profile…
Silicon strip detectors developed for the Inner Tracker (ITk) of the ATLAS experiment will operate in a harsh radiation environment of the HL-LHC accelerator. The ITk is thus designed to endure a total fluence of 1.6E15 1MeV n_eq/cm2 and a…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration…
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $\mu$m. This prototype is formed by a…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
A novel concept of optical signal recording in two-phase avalanche detectors, with Geiger-mode Avalanche Photodiodes (G-APD) is described. Avalanche-scintillation photons were measured in a thick Gas Electron Multiplier (THGEM) in view of…
A single-photon avalanche detector (SPAD) for high-speed quantum-key generation has successfully been developed. It has the highest photon detection repetition frequency and the lowest dark count rate in the world, as a board-mountable…