相关论文: Precise Optical Measurement of Carrier Mobilities …
The physical principles motivating the Z-scanning laser photoreflectance technique are discussed. The technique is shown to provide a powerful non-contact means to unambiguously characterize electronic transport properties in…
Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to…
Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic…
This paper shows a novel method to precisely measure the laser power using an optomechanical system. By measuring a mirror displacement caused by the reflection of an amplitude modulated laser beam, the number of photons in the incident…
We have addressed the challenge to carry out the angular tilt stabilization of a laser guiding mirror which is intended to route a laser beam with a high energy density. Such an application requires good angular accuracy as well as large…
We have applied the photoexcited muon spin spectroscopy technique (photo-$\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin…
In this paper, we propose a technique named reflection F-scan or RF-scan, that can be used to measure the nonlinear-refractive index n_2 of thin-film semiconductors. In this technique, a p-polarized Gaussian beam is focused using an…
Light beams possessing orbital angular momentum (OAM) have gained significant interest in areas such as optical manipulation, quantum entanglement, and super-resolved imaging. In itself, the OAM for a Laguerre-Gaussian beam is proportional…
A laser diffraction experiment was conducted to study light propagation in air. The experiment is easy to reproduce and it is based on simple optical principles. Two optical sensors (segmented photo-diodes) are used for measuring the…
We analyze optical soliton propagation in the presence of weak absorption lines with much narrower linewidths as compared to the soliton spectrum width using the novel perturbation analysis technique based on an integral representation in…
Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to…
The ambipolar carrier diffusion in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a point-like spatial profile are excited by a tightly focused pump laser pulse. The…
In this work, we present a comprehensive and comparative analysis of two detection modalities, i.e., polarization rotation and absorption measurement of light, for a double resonance alignment based optical magnetometer (DRAM). We derive…
Using an Electrically Focus Tunable Lens (EFTL), an integrating sphere and a tunable femtosecond-pulse laser (Mai Tai HP), we were able to measure the degenerate two-photon absorption coefficient (in transmission) of CdS and ZnSe in a long…
Estimation of an optical beam's transverse displacement is a canonical imaging problem fundamental to numerous optical imaging and sensing tasks. Quantum enhancements to the measurement precision in this problem have been studied…
Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very…
We show that the refractive index modification photoinduced in a biased nonlinear photorefractive crystal can be accurately measured and controlled by means of a background incoherent illumination and an external electric field. The…
In this paper, we describe an experiment performed at the Laboratoire de Physique des Lasers and dedicated to an optical measurement of the Boltzmann constant. With the proposed innovative technique, determining comes down to an ordinary…
The previous research proves that the random laser emission reflects not only the scattering properties but also the absorption properties. The random laser is therefore considered a potential tool for optical properties sensing. Although…
Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set by the pump beam and the lowest absorption…