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Single-layer transition metal dichalcogenides (TMDs) provide a promising material system to explore the electron's valley degree of freedom as a quantum information carrier. The valley degree of freedom in single-layer TMDs can be directly…

介观与纳米尺度物理 · 物理学 2019-10-09 Yanhao Tang , Kin Fai Mak , Jie Shan

In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called…

Van der Waals heterostructures of two-dimensional transition metal dichalcogenides provide a unique platform to engineer optoelectronic devices tuning their optical properties via stacking, twisting, or straining. Using ab initio Many-Body…

介观与纳米尺度物理 · 物理学 2025-03-21 R. Reho , A. R. Botello-Méndez , D. Sangalli , M. J. Verstraete , Zeila Zanolli

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate…

Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…

介观与纳米尺度物理 · 物理学 2026-05-26 Min-Gue Kim , Min-Sik Kim , Kenji Watanabe , Takashi Taniguchi , Ju-Jin Kim , Myung-Ho Bae

Two-dimensional (2D) van-der-Waals materials are a promising platform for exciton state engineering. In this paper, we study the properties of excitons in 2D group VI transition-metal dichalcogenide (TMD) semiconductors that are modified by…

强关联电子 · 物理学 2026-05-08 Jose M. Torres-Lopez , Sudipta Kundu , Felipe H. da Jornada , Tony Heinz , Allan H. MacDonald

We present here a formalism based on time-dependent density-functional theory (TDDFT) to describe characteristics of both intra- and inter-valley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of…

材料科学 · 物理学 2023-05-10 Jia Shi , Volodymyr Turkowski , Duy Le , Talat S. Rahman

Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these…

Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual…

Excitons in monolayer transition-metal dichalcogenides (TMDs) have garnered significant attention because of their large binding energies due to weakly screened Coulomb interaction, and direct bandgap at the K/K$^\prime$ point in the…

We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…

介观与纳米尺度物理 · 物理学 2020-01-22 Maciej Bieniek , Ludmila Szulakowska , Pawel Hawrylak

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting…

In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate…

介观与纳米尺度物理 · 物理学 2018-08-15 Galan Moody , Kha Tran , Xiaobo Lu , Travis Autry , James M. Fraser , Richard P. Mirin , Li Yang , Xiaoqin Li , Kevin L. Silverman

The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…

介观与纳米尺度物理 · 物理学 2026-04-06 Heun Mo Yoo , Tanner M. Janda , Connor Nasseraddin , Jason R. Petta

We investigate the role of long-range Coulomb interactions in $M$-valley moir\'es using the self-consistent Hartree-Fock approximation. This platform was recently proposed [Nature 643, 376 (2025) and arXiv:2411.18828 (2024)] as a new class…

介观与纳米尺度物理 · 物理学 2025-09-24 Christophe De Beule , Liangtao Peng , E. J. Mele , Shaffique Adam

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

The valley pseudospin in monolayer transition metal dichalcogenides (TMDs) has been proposed as a new way to manipulate information in various optoelectronic devices. This relies on a large valley polarization that remains stable over long…

介观与纳米尺度物理 · 物理学 2017-12-22 Fahad Mahmood , Zhanybek Alpichshev , Yi-Hsien Lee , Jing Kong , Nuh Gedik

Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the…

介观与纳米尺度物理 · 物理学 2018-10-17 Christopher J. Ciccarino , Thomas Christensen , Ravishankar Sundararaman , Prineha Narang

Excitons in Transition Metal Dichalcogenides (TMDs) acquire a spin-like quantum number, a pseudospin, originating from the crystal's discrete rotational symmetry. Here, we break this symmetry using a tunable uniaxial strain, effectively…

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